Metastable interstitials in CdSe and CdS crystals
An "anomalous" defect drift in external electric field, namely, transport of acceptorlike centres from the anode to the cathode, has been observed in CdS:Cu, CdS:Ag and nominally undoped CdSe crystals at 350-700 K. The effect is accounted for by transformation of acceptors into donors unde...
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| Дата: | 2003 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118082 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Metastable interstitials in CdSe and CdS crystals / L.V. Borkovska, B.M. Bulakh, L.Yu. Khomenkova, N.O. Korsunska, I.V. Markevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 437-440. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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| spelling |
irk-123456789-1180822017-05-29T03:04:35Z Metastable interstitials in CdSe and CdS crystals Borkovska, L.V. Bulakh, B.M. Khomenkova, L.Yu. Korsunska, N.O. Markevich, I.V. An "anomalous" defect drift in external electric field, namely, transport of acceptorlike centres from the anode to the cathode, has been observed in CdS:Cu, CdS:Ag and nominally undoped CdSe crystals at 350-700 K. The effect is accounted for by transformation of acceptors into donors under heating. The donors are metastable centres that do not display themselves in the equilibrium state and can be revealed only by drift in electric field. The acceptors are shown to be substitutional impurity atoms, acceptor-to-donor transformation occurring due to transition of these atoms from lattice sites to interstitials. Under cooling reverse donor-to-acceptor transition takes place. 2003 Article Metastable interstitials in CdSe and CdS crystals / L.V. Borkovska, B.M. Bulakh, L.Yu. Khomenkova, N.O. Korsunska, I.V. Markevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 437-440. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 61.72 Ji; 66.30 Jt; 66.30 Qa http://dspace.nbuv.gov.ua/handle/123456789/118082 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
An "anomalous" defect drift in external electric field, namely, transport of acceptorlike centres from the anode to the cathode, has been observed in CdS:Cu, CdS:Ag and nominally undoped CdSe crystals at 350-700 K. The effect is accounted for by transformation of acceptors into donors under heating. The donors are metastable centres that do not display themselves in the equilibrium state and can be revealed only by drift in electric field. The acceptors are shown to be substitutional impurity atoms, acceptor-to-donor transformation occurring due to transition of these atoms from lattice sites to interstitials. Under cooling reverse donor-to-acceptor transition takes place. |
| format |
Article |
| author |
Borkovska, L.V. Bulakh, B.M. Khomenkova, L.Yu. Korsunska, N.O. Markevich, I.V. |
| spellingShingle |
Borkovska, L.V. Bulakh, B.M. Khomenkova, L.Yu. Korsunska, N.O. Markevich, I.V. Metastable interstitials in CdSe and CdS crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Borkovska, L.V. Bulakh, B.M. Khomenkova, L.Yu. Korsunska, N.O. Markevich, I.V. |
| author_sort |
Borkovska, L.V. |
| title |
Metastable interstitials in CdSe and CdS crystals |
| title_short |
Metastable interstitials in CdSe and CdS crystals |
| title_full |
Metastable interstitials in CdSe and CdS crystals |
| title_fullStr |
Metastable interstitials in CdSe and CdS crystals |
| title_full_unstemmed |
Metastable interstitials in CdSe and CdS crystals |
| title_sort |
metastable interstitials in cdse and cds crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118082 |
| citation_txt |
Metastable interstitials in CdSe and CdS crystals / L.V. Borkovska, B.M. Bulakh, L.Yu. Khomenkova, N.O. Korsunska, I.V. Markevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 437-440. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT borkovskalv metastableinterstitialsincdseandcdscrystals AT bulakhbm metastableinterstitialsincdseandcdscrystals AT khomenkovalyu metastableinterstitialsincdseandcdscrystals AT korsunskano metastableinterstitialsincdseandcdscrystals AT markevichiv metastableinterstitialsincdseandcdscrystals |
| first_indexed |
2023-10-18T20:31:18Z |
| last_indexed |
2023-10-18T20:31:18Z |
| _version_ |
1796150418141609984 |