Compensation of hole conductivity in CdTe crystals doped with Cr
We present the results of optical and electrophysical investigations of CdTe:Cr crystals. A model explaining a considerable shift of the fundamental absorbtion edge in the crystals into the long-wave region is proposed. It is found that the doping of cadmium telluride crystals with Cr impurity le...
Збережено в:
| Дата: | 2007 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118128 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Compensation of hole conductivity in CdTe crystals doped with Cr / E.S. Nikonyuk, Z.I. Zakharuk, M.I. Kuchma, M.O. Kovalets, A.I. Rarenko, I.M. Yuriychuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 77-79. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | We present the results of optical and electrophysical investigations of CdTe:Cr
crystals. A model explaining a considerable shift of the fundamental absorbtion edge in
the crystals into the long-wave region is proposed. It is found that the doping of cadmium
telluride crystals with Cr impurity leads to the introduction of deep donors with
Еv + 0.19…0.32 eV |
|---|