Optical recording of information pits in thin layers of chalcogenide semiconductors

• Дата: 2004
• Автори: Morozovska, A.N., Kostyukevych, S.A., Nikitenko, L.L., Kryuchin, A.A., Kudryavtsev, A.A., Shepeliavyi, P.E., Moskalenko, N.L.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/118142
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Optical recording of information pits in thin layers of chalcogenide semiconductors / A.N. Morozovska, S.A. Kostyukevych, L.L. Nikitenko, A.A. Kryuchin, A.A. Kudryavtsev, P.E. Shepeliavyi, N.L. Moskalenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 93-100. — Бібліогр.: 18 назв. — англ.

The paper is devoted to the theoretical consideration of the question how to record pits with the necessary height profile in photosensitive materials by varying their heat conductivity, photosensitivity, optical absorption, as well as the recording gaussian beam intensity, radius and exposure time...