Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry

Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry

Structural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal space maps (HR-RSMs) were found as a function...

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Бібліографічні деталі
Дата:2010
Автори: Fodchuk, І.М., Dovganyuk, V.V., Litvinchuk, Т.V., Kladko, V.P., Slobodian, М.V., Gudymenko, O.Yo., Swiatek, Z.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118237
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry/ І.М. Fodchuk, V.V. Dovganyuk, Т.V. Litvinchuk , V.P. Kladko, М.V. Slobodian, O.Yo. Gudymenko, Z. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 209-213. — Бібліогр.: 22 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118237
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spelling irk-123456789-1182372017-05-30T03:05:49Z Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry Fodchuk, І.М. Dovganyuk, V.V. Litvinchuk, Т.V. Kladko, V.P. Slobodian, М.V. Gudymenko, O.Yo. Swiatek, Z. Structural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal space maps (HR-RSMs) were found as a function of the radiation dose. The generalized dynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several types (spherical and disc-shaped clusters as well as dislocation loops) and a damaged nearsurface layer was used for explanation. 2010 Article Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry/ І.М. Fodchuk, V.V. Dovganyuk, Т.V. Litvinchuk , V.P. Kladko, М.V. Slobodian, O.Yo. Gudymenko, Z. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 209-213. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 61.10.Kw, Nz, 61.72.Dd, Ff, 68.55.Ln http://dspace.nbuv.gov.ua/handle/123456789/118237 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Structural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal space maps (HR-RSMs) were found as a function of the radiation dose. The generalized dynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several types (spherical and disc-shaped clusters as well as dislocation loops) and a damaged nearsurface layer was used for explanation.
format Article
author Fodchuk, І.М.
Dovganyuk, V.V.
Litvinchuk, Т.V.
Kladko, V.P.
Slobodian, М.V.
Gudymenko, O.Yo.
Swiatek, Z.
spellingShingle Fodchuk, І.М.
Dovganyuk, V.V.
Litvinchuk, Т.V.
Kladko, V.P.
Slobodian, М.V.
Gudymenko, O.Yo.
Swiatek, Z.
Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Fodchuk, І.М.
Dovganyuk, V.V.
Litvinchuk, Т.V.
Kladko, V.P.
Slobodian, М.V.
Gudymenko, O.Yo.
Swiatek, Z.
author_sort Fodchuk, І.М.
title Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
title_short Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
title_full Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
title_fullStr Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
title_full_unstemmed Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
title_sort structural changes in cz-si single crystals irradiated with high-energy electrons from data of high-resolution x-ray diffractometry
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2010
url http://dspace.nbuv.gov.ua/handle/123456789/118237
citation_txt Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry/ І.М. Fodchuk, V.V. Dovganyuk, Т.V. Litvinchuk , V.P. Kladko, М.V. Slobodian, O.Yo. Gudymenko, Z. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 209-213. — Бібліогр.: 22 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:31:50Z
last_indexed 2023-10-18T20:31:50Z
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