Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy by Kladko, V.P., Datsenko, L.I., Maksimenko, Z.V., Lytvyn, O.S., Prokopenko, I.V., Zytkiewicz, Z.

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Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study by Strelchuk, V.V., Kladko, V.P., Yefanov, O.M., Kolomys, O.F., Gudymenko, O.I., Valakh, M.Ya.

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X-ray diffraction study of deformation state in InGaN/GaN multilayered structures by Kladko, V.P., Kuchuk, A.V., Safryuk, N.V., Machulin, V.F., Belyaev, A.E., Konakova, R.V., Yavich, B.S.

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Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry by Fodchuk, І.М., Dovganyuk, V.V., Litvinchuk, Т.V., Kladko, V.P., Slobodian, М.V., Gudymenko, O.Yo., Swiatek, Z.

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Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment by Konakova, R.V., Kladko, V.P., Lytvyn, O.S., Okhrimenko, O.B., Konoplev, B.G., Svetlichnyi, A.M., Lissotschenko, V.N.

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Influence of small miscuts on self-ordered growth of Ge nanoislands by Gudymenko, O.Yo., Kladko, V.P., Yefanov, O.M., Slobodian, M.V., Polischuk, Yu.S., Krasilnik, Z.F., Lobanov, D.V., Novikov, А.А.

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Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.

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Investigation of superlattice structure parameters using quasi-forbidden reflections by Kladko, V.P., Datsenko, L.I., Korchovyi, A.A., Machulin, V.F., Lytvyn, P.M., Shalimov, A.V., Kuchuk, A.V., Kogutyuk, P.P.

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Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios by Kladko, V.P., Safriuk, N.V., Stanchu, H.V., Kuchuk, A.V., Melnyk, V.P., Oberemok, A.S., Kriviy, S.B., Maksymenko, Z.V., Belyaev, A.E., Yavich, B.S.

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The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts by Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Konakova, R.V., Kladko, V.P., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Korostinskaya, T.V., Ataubaeva, A.B., Nevolin, P.V.

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Development of high-stable contact systems to gallium nitride microwave diodes by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kapitanchuk, L.M., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sheremet, V.N., Sveshnikov, Yu.N.

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Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP by Belyaev, A.E., Boltovets, N.A., Bobyl, A.B., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Nasyrov, M.U., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V.

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Ohmic contacts based on Pd to indium phosphide Gunn diodes by Belyaev, A.E., Boltovets, N.S., Bobyl, A.V., Zorenko, A.V., Arsentiev, I.N., Kladko, V.P., Kovtonyuk, V.M., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V.

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