Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type
The influence of γ-irradiation (⁶⁰Co) (within the dose range 1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium and silicon has been investigated. In the oxygen-containing samples of n − AsGe and n − PSi , and in the compensated crystals of n −Si , the mobility...
Збережено в:
| Дата: | 2012 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118240 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 26-31. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118240 |
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dspace |
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irk-123456789-1182402017-05-30T03:03:10Z Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type Gaidar, G.P. The influence of γ-irradiation (⁶⁰Co) (within the dose range 1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium and silicon has been investigated. In the oxygen-containing samples of n − AsGe and n − PSi , and in the compensated crystals of n −Si , the mobility is shown to grow anomalously with the irradiation dose in the region of combined scattering of carriers. Proposed in this paper is the model based on accounting partial neutralization of charge of scattering centers by charge of radiation defects produced mainly around the scattering centers. This model qualitatively explains the experimental data. 2012 Article Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 26-31. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 61.80.Ed, 61.82.Fk, 72.20.-i http://dspace.nbuv.gov.ua/handle/123456789/118240 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The influence of γ-irradiation (⁶⁰Co) (within the dose range
1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium
and silicon has been investigated. In the oxygen-containing samples of n − AsGe and
n − PSi , and in the compensated crystals of n −Si , the mobility is shown to grow
anomalously with the irradiation dose in the region of combined scattering of carriers.
Proposed in this paper is the model based on accounting partial neutralization of charge
of scattering centers by charge of radiation defects produced mainly around the scattering
centers. This model qualitatively explains the experimental data. |
| format |
Article |
| author |
Gaidar, G.P. |
| spellingShingle |
Gaidar, G.P. Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gaidar, G.P. |
| author_sort |
Gaidar, G.P. |
| title |
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type |
| title_short |
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type |
| title_full |
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type |
| title_fullStr |
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type |
| title_full_unstemmed |
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type |
| title_sort |
influence of γ-irradiation (⁶⁰со) on the concentration and mobility of carriers in ge and si single crystals of n-type |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118240 |
| citation_txt |
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 26-31. — Бібліогр.: 12 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:31:39Z |
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2023-10-18T20:31:39Z |
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