2025-02-23T15:19:02-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118240%22&qt=morelikethis&rows=5
2025-02-23T15:19:02-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118240%22&qt=morelikethis&rows=5
2025-02-23T15:19:02-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T15:19:02-05:00 DEBUG: Deserialized SOLR response
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type

Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type

The influence of γ-irradiation (⁶⁰Co) (within the dose range 1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium and silicon has been investigated. In the oxygen-containing samples of n − AsGe and n − PSi , and in the compensated crystals of n −Si , the mobility...

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Bibliographic Details
Main Author: Gaidar, G.P.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118240
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2025-02-23T15:19:02-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118240%22&qt=morelikethis
2025-02-23T15:19:02-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118240%22&qt=morelikethis
2025-02-23T15:19:02-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T15:19:02-05:00 DEBUG: Deserialized SOLR response

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