Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs

We present a setup and procedure of studying p-n junction to case thermal resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a...

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Збережено в:
Бібліографічні деталі
Дата:2012
Автори: Sorokin, V.M., Konakova, R.V., Kudryk, Ya.Ya., Zinovchuk, A.V., Bigun, R.I., Kudryk, R.Ya., Shynkarenko, V.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118301
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs / V.M. Sorokin, R.V. Konakova, Ya.Ya. Kudryk, A.V. Zinovchuk, R.I. Bigun, R.Ya. Kudryk, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 124-128. — Бібліогр.: 11 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1183012017-05-30T03:03:31Z Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs Sorokin, V.M. Konakova, R.V. Kudryk, Ya.Ya. Zinovchuk, A.V. Bigun, R.I. Kudryk, R.Ya. Shynkarenko, V.V. We present a setup and procedure of studying p-n junction to case thermal resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and LED chip are separated. 2012 Article Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs / V.M. Sorokin, R.V. Konakova, Ya.Ya. Kudryk, A.V. Zinovchuk, R.I. Bigun, R.Ya. Kudryk, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 124-128. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 66.70.Df, 85.60.Jb http://dspace.nbuv.gov.ua/handle/123456789/118301 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We present a setup and procedure of studying p-n junction to case thermal resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and LED chip are separated.
format Article
author Sorokin, V.M.
Konakova, R.V.
Kudryk, Ya.Ya.
Zinovchuk, A.V.
Bigun, R.I.
Kudryk, R.Ya.
Shynkarenko, V.V.
spellingShingle Sorokin, V.M.
Konakova, R.V.
Kudryk, Ya.Ya.
Zinovchuk, A.V.
Bigun, R.I.
Kudryk, R.Ya.
Shynkarenko, V.V.
Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Sorokin, V.M.
Konakova, R.V.
Kudryk, Ya.Ya.
Zinovchuk, A.V.
Bigun, R.I.
Kudryk, R.Ya.
Shynkarenko, V.V.
author_sort Sorokin, V.M.
title Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
title_short Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
title_full Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
title_fullStr Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
title_full_unstemmed Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
title_sort technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride leds
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2012
url http://dspace.nbuv.gov.ua/handle/123456789/118301
citation_txt Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs / V.M. Sorokin, R.V. Konakova, Ya.Ya. Kudryk, A.V. Zinovchuk, R.I. Bigun, R.Ya. Kudryk, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 124-128. — Бібліогр.: 11 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:31:44Z
last_indexed 2023-10-18T20:31:44Z
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