Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons
We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) × × 10¹² cm⁻³ ) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³ ) grown by the floating-zone technique after the irradiation by fast-pile neutrons at 287 К. The dose and the temperature dependences of the effective concentration of c...
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| Дата: | 2007 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118342 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons / A.P. Dolgolenko, M.D. Varentsov, G.P. Gaidar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 9-14. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118342 |
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| record_format |
dspace |
| spelling |
irk-123456789-1183422017-05-30T03:04:20Z Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons Dolgolenko, A.P. Varentsov, M.D. Gaidar, G.P. Litovchenko, P.G. We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) × × 10¹² cm⁻³ ) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³ ) grown by the floating-zone technique after the irradiation by fast-pile neutrons at 287 К. The dose and the temperature dependences of the effective concentration of carriers have been measured. The calculation has been carried out in the framework of Gossick's corrected model. It is shown that the radiation hardness of n- and p-Si, on the one hand, is defined by clusters, and, on the other hand, by vacancy defects (acceptors) in n-Si and by interstitial defects (donors and acceptors) in p-Si. We have determined that, during the irradiation of p-Si by small doses of neutrons, the change of a charge state of interstitial defects leads to the annealing of these defects and to a decrease of their introduction rate. 2007 Article Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons / A.P. Dolgolenko, M.D. Varentsov, G.P. Gaidar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 9-14. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 61.72.Ji, 61.80.Hg, 61.82.Fk, 71.55.Cn http://dspace.nbuv.gov.ua/handle/123456789/118342 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) ×
× 10¹² cm⁻³
) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³
) grown by the floating-zone technique
after the irradiation by fast-pile neutrons at 287 К. The dose and the temperature
dependences of the effective concentration of carriers have been measured. The
calculation has been carried out in the framework of Gossick's corrected model. It is
shown that the radiation hardness of n- and p-Si, on the one hand, is defined by clusters,
and, on the other hand, by vacancy defects (acceptors) in n-Si and by interstitial defects
(donors and acceptors) in p-Si. We have determined that, during the irradiation of p-Si by
small doses of neutrons, the change of a charge state of interstitial defects leads to the
annealing of these defects and to a decrease of their introduction rate. |
| format |
Article |
| author |
Dolgolenko, A.P. Varentsov, M.D. Gaidar, G.P. Litovchenko, P.G. |
| spellingShingle |
Dolgolenko, A.P. Varentsov, M.D. Gaidar, G.P. Litovchenko, P.G. Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Dolgolenko, A.P. Varentsov, M.D. Gaidar, G.P. Litovchenko, P.G. |
| author_sort |
Dolgolenko, A.P. |
| title |
Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons |
| title_short |
Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons |
| title_full |
Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons |
| title_fullStr |
Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons |
| title_full_unstemmed |
Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons |
| title_sort |
dependence of the defect introduction rate on the dose of irradiation of p-si by fast-pile neutrons |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118342 |
| citation_txt |
Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons / A.P. Dolgolenko, M.D. Varentsov, G.P. Gaidar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 9-14. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT dolgolenkoap dependenceofthedefectintroductionrateonthedoseofirradiationofpsibyfastpileneutrons AT varentsovmd dependenceofthedefectintroductionrateonthedoseofirradiationofpsibyfastpileneutrons AT gaidargp dependenceofthedefectintroductionrateonthedoseofirradiationofpsibyfastpileneutrons AT litovchenkopg dependenceofthedefectintroductionrateonthedoseofirradiationofpsibyfastpileneutrons |
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2023-10-18T20:31:57Z |
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2023-10-18T20:31:57Z |
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