Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of vacancies, interstitial point defects, and disloca...
Збережено в:
| Дата: | 2007 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118345 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing / S.V. Shutov, A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 26-30. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118345 |
|---|---|
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dspace |
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irk-123456789-1183452017-05-30T03:03:58Z Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing Shutov, S.V. Shtan’ko, A.D. Kurak, V.V. Litvinova, M.B. The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of vacancies, interstitial point defects, and dislocations in nonstoichiometric crystals is revealed. 2007 Article Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing / S.V. Shutov, A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 26-30. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 61.72.Cc, 61.71.Ji, 71.55.Eq http://dspace.nbuv.gov.ua/handle/123456789/118345 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The time dependences of changes of the electrophysical, mechanical, and light
emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving
annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of
vacancies, interstitial point defects, and dislocations in nonstoichiometric crystals is
revealed. |
| format |
Article |
| author |
Shutov, S.V. Shtan’ko, A.D. Kurak, V.V. Litvinova, M.B. |
| spellingShingle |
Shutov, S.V. Shtan’ko, A.D. Kurak, V.V. Litvinova, M.B. Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Shutov, S.V. Shtan’ko, A.D. Kurak, V.V. Litvinova, M.B. |
| author_sort |
Shutov, S.V. |
| title |
Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing |
| title_short |
Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing |
| title_full |
Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing |
| title_fullStr |
Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing |
| title_full_unstemmed |
Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing |
| title_sort |
change of parameters of semiinsulated undoped gaas nonstoichiometric crystals under annealing |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118345 |
| citation_txt |
Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing / S.V. Shutov, A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 26-30. — Бібліогр.: 13 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:31:57Z |
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