Influence of complex defects on electrophysical properties of GaP light emitting diodes
In order to estimate the role of complex defects on GaP light emitting diodes (LED) operation, luminescent and electrical characteristics of GaP LEDs irradiated with reactor neutrons have been studied. It has been stated that nonradiative levels of radiation defects affect electroluminescence que...
Збережено в:
| Дата: | 2014 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118369 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of complex defects on electrophysical properties of GaP light emitting diodes / O. Konoreva, E. Malyj, S. Mamykin, I. Petrenko, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 184-187. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | In order to estimate the role of complex defects on GaP light emitting diodes
(LED) operation, luminescent and electrical characteristics of GaP LEDs irradiated with
reactor neutrons have been studied. It has been stated that nonradiative levels of radiation
defects affect electroluminescence quenching. From the analysis of the tunnel current,
the density of dislocations in the depleted part of the p–n junction was obtained. Neutron
induced disorder regions do not change the tunnel component of the direct current of red
diodes, increasing the dislocation density, because the carrier flow along the “tunnel
shunts” is blocked. |
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