Харвестер відкритої науки НАН України

Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells

за авторством Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Radiation-induced effects in silicon

за авторством Gaidar, G.P., Pinkovska, M.B., Starchyk, M.I.
Опубліковано в: Вопросы атомной науки и техники (2019)

Influence of complex defects on electrophysical properties of GaP light emitting diodes

за авторством Konoreva, O., Malyj, E., Mamykin, S., Petrenko, I., Pinkovska, M., Tartachnyk, V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Peculiarities of neutron irradiation influence on GaP light-emitting structures

за авторством Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions

за авторством Starchyk, M.I., Marchenko, L.S., Pinkovska, M.B., Shmatko, G.G., Varnina, V.I.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Radiative recombination in initial and electron-irradiated GaP crystals

за авторством Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Influence of structural defects on photoconductivity of zinc diphosphide

за авторством Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Ultrasound influence on exciton emission of GaP light diodes

за авторством Gontaruk, O.M., Khivrych, V.I., Pinkovska, M.B., Tartachnyk, V.P., Olikh, Ya.M., Vernydub, R.M., Opilat, V.Ya.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Low doses effect in GaP light-emitting diodes

за авторством Hontaruk, O.M., Konoreva, O.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Radkevych, O.I., Tartachnyk, V.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons

за авторством Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P., Shlapatska, V.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity

за авторством Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Olikh, Ya.M., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Semiconductor sensors for dosimetry of epithermal neutrons

за авторством Litovchenko, P.G., Moss, R., Stecher-Rasmussen, F., Appelman, K., Barabash, L.I., Kibkalo, T.I., Lastovetsky, V.F., Litovchenko, A.P., Pinkovska, M.B.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)