Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells by Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.

Get full text

Peculiarities of optical absorption near-edge in irradiated GaP:Te by Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.

Get full text

Influence of complex defects on electrophysical properties of GaP light emitting diodes by Konoreva, O., Malyj, E., Mamykin, S., Petrenko, I., Pinkovska, M., Tartachnyk, V.

Get full text

Peculiarities of neutron irradiation influence on GaP light-emitting structures by Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.

Get full text

Radiative recombination in initial and electron-irradiated GaP crystals by Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.

Get full text

Self-organization in irradiated semiconductor crystals caused by thermal annealing by Zavada, M., Konoreva, O., Lytovchenko, P., Opilat, V., Pinkovska, M., Radkevych, O., Tartachnyk, V.

Get full text

Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons by Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P., Shlapatska, V.V.

Get full text

Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity by Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Olikh, Ya.M., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P.

Get full text

Low doses effect in GaP light-emitting diodes by Hontaruk, O.M., Konoreva, O.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Radkevych, O.I., Tartachnyk, V.P.

Get full text

Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons by Vernydub, R.M., Kyrylenko, O.I., Konoreva, O.V., Olikh, Ya.M., Litovchenko, P.G., Pavlovskyy, Yu.V., Potera, P., Tartachnyk, V.P.

Get full text