Харвестер відкритої науки НАН України

Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells

за авторством Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Peculiarities of optical absorption near-edge in irradiated GaP:Te

за авторством Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.
Опубліковано в: Functional Materials (2010)

Influence of complex defects on electrophysical properties of GaP light emitting diodes

за авторством Konoreva, O., Malyj, E., Mamykin, S., Petrenko, I., Pinkovska, M., Tartachnyk, V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Peculiarities of neutron irradiation influence on GaP light-emitting structures

за авторством Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

Radiative recombination in initial and electron-irradiated GaP crystals

за авторством Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Low doses effect in GaP light-emitting diodes

за авторством Hontaruk, O.M., Konoreva, O.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Radkevych, O.I., Tartachnyk, V.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons

за авторством Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P., Shlapatska, V.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity

за авторством Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Olikh, Ya.M., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)