Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells von Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.

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Peculiarities of optical absorption near-edge in irradiated GaP:Te von Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.

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Influence of complex defects on electrophysical properties of GaP light emitting diodes von Konoreva, O., Malyj, E., Mamykin, S., Petrenko, I., Pinkovska, M., Tartachnyk, V.

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Peculiarities of neutron irradiation influence on GaP light-emitting structures von Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.

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Radiative recombination in initial and electron-irradiated GaP crystals von Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.

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Self-organization in irradiated semiconductor crystals caused by thermal annealing von Zavada, M., Konoreva, O., Lytovchenko, P., Opilat, V., Pinkovska, M., Radkevych, O., Tartachnyk, V.

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Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons von Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P., Shlapatska, V.V.

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Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity von Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Olikh, Ya.M., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P.

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Low doses effect in GaP light-emitting diodes von Hontaruk, O.M., Konoreva, O.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Radkevych, O.I., Tartachnyk, V.P.

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Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons von Vernydub, R.M., Kyrylenko, O.I., Konoreva, O.V., Olikh, Ya.M., Litovchenko, P.G., Pavlovskyy, Yu.V., Potera, P., Tartachnyk, V.P.

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