Influence of complex defects on electrophysical properties of GaP light emitting diodes
In order to estimate the role of complex defects on GaP light emitting diodes (LED) operation, luminescent and electrical characteristics of GaP LEDs irradiated with reactor neutrons have been studied. It has been stated that nonradiative levels of radiation defects affect electroluminescence que...
Збережено в:
| Дата: | 2014 |
|---|---|
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118369 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of complex defects on electrophysical properties of GaP light emitting diodes / O. Konoreva, E. Malyj, S. Mamykin, I. Petrenko, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 184-187. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118369 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1183692017-05-31T03:06:09Z Influence of complex defects on electrophysical properties of GaP light emitting diodes Konoreva, O. Malyj, E. Mamykin, S. Petrenko, I. Pinkovska, M. Tartachnyk, V. In order to estimate the role of complex defects on GaP light emitting diodes (LED) operation, luminescent and electrical characteristics of GaP LEDs irradiated with reactor neutrons have been studied. It has been stated that nonradiative levels of radiation defects affect electroluminescence quenching. From the analysis of the tunnel current, the density of dislocations in the depleted part of the p–n junction was obtained. Neutron induced disorder regions do not change the tunnel component of the direct current of red diodes, increasing the dislocation density, because the carrier flow along the “tunnel shunts” is blocked. 2014 Article Influence of complex defects on electrophysical properties of GaP light emitting diodes / O. Konoreva, E. Malyj, S. Mamykin, I. Petrenko, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 184-187. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 29.40.-n, 85.30.-z, 85.60.Dw http://dspace.nbuv.gov.ua/handle/123456789/118369 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In order to estimate the role of complex defects on GaP light emitting diodes
(LED) operation, luminescent and electrical characteristics of GaP LEDs irradiated with
reactor neutrons have been studied. It has been stated that nonradiative levels of radiation
defects affect electroluminescence quenching. From the analysis of the tunnel current,
the density of dislocations in the depleted part of the p–n junction was obtained. Neutron
induced disorder regions do not change the tunnel component of the direct current of red
diodes, increasing the dislocation density, because the carrier flow along the “tunnel
shunts” is blocked. |
| format |
Article |
| author |
Konoreva, O. Malyj, E. Mamykin, S. Petrenko, I. Pinkovska, M. Tartachnyk, V. |
| spellingShingle |
Konoreva, O. Malyj, E. Mamykin, S. Petrenko, I. Pinkovska, M. Tartachnyk, V. Influence of complex defects on electrophysical properties of GaP light emitting diodes Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Konoreva, O. Malyj, E. Mamykin, S. Petrenko, I. Pinkovska, M. Tartachnyk, V. |
| author_sort |
Konoreva, O. |
| title |
Influence of complex defects on electrophysical properties of GaP light emitting diodes |
| title_short |
Influence of complex defects on electrophysical properties of GaP light emitting diodes |
| title_full |
Influence of complex defects on electrophysical properties of GaP light emitting diodes |
| title_fullStr |
Influence of complex defects on electrophysical properties of GaP light emitting diodes |
| title_full_unstemmed |
Influence of complex defects on electrophysical properties of GaP light emitting diodes |
| title_sort |
influence of complex defects on electrophysical properties of gap light emitting diodes |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118369 |
| citation_txt |
Influence of complex defects on electrophysical properties
of GaP light emitting diodes / O. Konoreva, E. Malyj, S. Mamykin, I. Petrenko, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 184-187. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT konorevao influenceofcomplexdefectsonelectrophysicalpropertiesofgaplightemittingdiodes AT malyje influenceofcomplexdefectsonelectrophysicalpropertiesofgaplightemittingdiodes AT mamykins influenceofcomplexdefectsonelectrophysicalpropertiesofgaplightemittingdiodes AT petrenkoi influenceofcomplexdefectsonelectrophysicalpropertiesofgaplightemittingdiodes AT pinkovskam influenceofcomplexdefectsonelectrophysicalpropertiesofgaplightemittingdiodes AT tartachnykv influenceofcomplexdefectsonelectrophysicalpropertiesofgaplightemittingdiodes |
| first_indexed |
2023-10-18T20:31:58Z |
| last_indexed |
2023-10-18T20:31:58Z |
| _version_ |
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