Influence of pulse magnetic fields treatment on optical properties of GaAs based films
Long-term transformations of the optical reflectance of GaAs epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) have been obtained. Optical measurements were performed within the wavelength range 800…1100 nm at 300 K. Non-monotonous changes of re...
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| Дата: | 2014 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118370 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of pulse magnetic fields treatment on optical properties of GaAs based films / R.V. Konakova, M.V. Sosnova, S.M. Red'ko, V.V. Milenin, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118370 |
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| record_format |
dspace |
| spelling |
irk-123456789-1183702017-06-05T11:37:13Z Influence of pulse magnetic fields treatment on optical properties of GaAs based films Konakova, R.V. Sosnova, M.V. Red’ko, S.M. Milenin, V.V. Red’ko, R.A. Long-term transformations of the optical reflectance of GaAs epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) have been obtained. Optical measurements were performed within the wavelength range 800…1100 nm at 300 K. Non-monotonous changes of reflectance were observed. Experimental results have been interpreted in terms of diffusion of point defects, resulting from destruction of metastable complexes (probably [VAs+impurity]), from the internal boundaries to the surfaces of the investigated structures. The method for detection of non-equilibrium complexes in multilayer objects has been proposed. 2014 Article Influence of pulse magnetic fields treatment on optical properties of GaAs based films / R.V. Konakova, M.V. Sosnova, S.M. Red'ko, V.V. Milenin, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 42.25.Gy, 42.25.Hz http://dspace.nbuv.gov.ua/handle/123456789/118370 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Long-term transformations of the optical reflectance of GaAs epitaxial
structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t =
5 min) have been obtained. Optical measurements were performed within the wavelength
range 800…1100 nm at 300 K. Non-monotonous changes of reflectance were observed.
Experimental results have been interpreted in terms of diffusion of point defects,
resulting from destruction of metastable complexes (probably [VAs+impurity]), from the
internal boundaries to the surfaces of the investigated structures. The method for
detection of non-equilibrium complexes in multilayer objects has been proposed. |
| format |
Article |
| author |
Konakova, R.V. Sosnova, M.V. Red’ko, S.M. Milenin, V.V. Red’ko, R.A. |
| spellingShingle |
Konakova, R.V. Sosnova, M.V. Red’ko, S.M. Milenin, V.V. Red’ko, R.A. Influence of pulse magnetic fields treatment on optical properties of GaAs based films Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Konakova, R.V. Sosnova, M.V. Red’ko, S.M. Milenin, V.V. Red’ko, R.A. |
| author_sort |
Konakova, R.V. |
| title |
Influence of pulse magnetic fields treatment on optical properties of GaAs based films |
| title_short |
Influence of pulse magnetic fields treatment on optical properties of GaAs based films |
| title_full |
Influence of pulse magnetic fields treatment on optical properties of GaAs based films |
| title_fullStr |
Influence of pulse magnetic fields treatment on optical properties of GaAs based films |
| title_full_unstemmed |
Influence of pulse magnetic fields treatment on optical properties of GaAs based films |
| title_sort |
influence of pulse magnetic fields treatment on optical properties of gaas based films |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118370 |
| citation_txt |
Influence of pulse magnetic fields treatment
on optical properties of GaAs based films / R.V. Konakova, M.V. Sosnova, S.M. Red'ko, V.V. Milenin, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT konakovarv influenceofpulsemagneticfieldstreatmentonopticalpropertiesofgaasbasedfilms AT sosnovamv influenceofpulsemagneticfieldstreatmentonopticalpropertiesofgaasbasedfilms AT redkosm influenceofpulsemagneticfieldstreatmentonopticalpropertiesofgaasbasedfilms AT mileninvv influenceofpulsemagneticfieldstreatmentonopticalpropertiesofgaasbasedfilms AT redkora influenceofpulsemagneticfieldstreatmentonopticalpropertiesofgaasbasedfilms |
| first_indexed |
2023-10-18T20:31:59Z |
| last_indexed |
2023-10-18T20:31:59Z |
| _version_ |
1796150444227035136 |