Defect reorganization induced by pulsed magnetic field in porous InP
We present results of investigations of the effect caused by weak magnetic field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was found when studying the spectra of radiative recombination within the range 0.6 to 2.0 µm at 77 K. It was obtained that field influen...
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Дата: | 2010 |
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Автори: | , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118402 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Defect reorganization induced by pulsed magnetic field in porous InP / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 330-333. — Бібліогр.: 8 назв. — англ. |
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irk-123456789-1184022017-05-31T03:05:54Z Defect reorganization induced by pulsed magnetic field in porous InP Milenin, V.V. Red’ko, R.A. We present results of investigations of the effect caused by weak magnetic field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was found when studying the spectra of radiative recombination within the range 0.6 to 2.0 µm at 77 K. It was obtained that field influence initiates long-term changes in the intensity of radiative recombination inherent to centers of different nature. A possible mechanism of observed transformation is discussed. 2010 Article Defect reorganization induced by pulsed magnetic field in porous InP / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 330-333. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 78.55.Mb http://dspace.nbuv.gov.ua/handle/123456789/118402 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
We present results of investigations of the effect caused by weak magnetic
field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was
found when studying the spectra of radiative recombination within the range 0.6 to
2.0 µm at 77 K. It was obtained that field influence initiates long-term changes in the
intensity of radiative recombination inherent to centers of different nature. A possible
mechanism of observed transformation is discussed. |
format |
Article |
author |
Milenin, V.V. Red’ko, R.A. |
spellingShingle |
Milenin, V.V. Red’ko, R.A. Defect reorganization induced by pulsed magnetic field in porous InP Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Milenin, V.V. Red’ko, R.A. |
author_sort |
Milenin, V.V. |
title |
Defect reorganization induced by pulsed magnetic field in porous InP |
title_short |
Defect reorganization induced by pulsed magnetic field in porous InP |
title_full |
Defect reorganization induced by pulsed magnetic field in porous InP |
title_fullStr |
Defect reorganization induced by pulsed magnetic field in porous InP |
title_full_unstemmed |
Defect reorganization induced by pulsed magnetic field in porous InP |
title_sort |
defect reorganization induced by pulsed magnetic field in porous inp |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2010 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/118402 |
citation_txt |
Defect reorganization induced by pulsed magnetic field
in porous InP / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 330-333. — Бібліогр.: 8 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT mileninvv defectreorganizationinducedbypulsedmagneticfieldinporousinp AT redkora defectreorganizationinducedbypulsedmagneticfieldinporousinp |
first_indexed |
2023-10-18T20:32:03Z |
last_indexed |
2023-10-18T20:32:03Z |
_version_ |
1796150451021807616 |