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Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy
The potential of surface plasmon resonance-enhanced total internal reflection microscopy for visualization of submicron particles has been demonstrated using submicron-sized silicon rods as a test object. Submicron Si-rods were deposited onto the surface of a plasmon-supporting gold film by sedim...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118417 |
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irk-123456789-1184172017-05-31T03:06:28Z Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy Rengevych, O.V. Beketov, G.V. Ushenin, Yu.V. The potential of surface plasmon resonance-enhanced total internal reflection microscopy for visualization of submicron particles has been demonstrated using submicron-sized silicon rods as a test object. Submicron Si-rods were deposited onto the surface of a plasmon-supporting gold film by sedimentation from suspension, and their images were obtained using optical microscope with SPR excitation. Quality of images obtained in this way was compared with images viewed from the prism side in the SPR microscopy configuration. Specific features of light scattering from filiform objects are discussed. The study was aimed at development of a novel type of SPR-based biosensor relied upon direct count of biological species of interest (bacteria, viruses, large biomolecular complexes). 2014 Article Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy / O.V. Rengevych, G.V. Beketov, Yu.V. Ushenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 368-373. — Бібліогр.: 31 назв. — англ. 1560-8034 PACS 73.20.Mf http://dspace.nbuv.gov.ua/handle/123456789/118417 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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English |
description |
The potential of surface plasmon resonance-enhanced total internal reflection
microscopy for visualization of submicron particles has been demonstrated using
submicron-sized silicon rods as a test object. Submicron Si-rods were deposited onto the
surface of a plasmon-supporting gold film by sedimentation from suspension, and their
images were obtained using optical microscope with SPR excitation. Quality of images
obtained in this way was compared with images viewed from the prism side in the SPR
microscopy configuration. Specific features of light scattering from filiform objects are
discussed. The study was aimed at development of a novel type of SPR-based biosensor
relied upon direct count of biological species of interest (bacteria, viruses, large
biomolecular complexes). |
format |
Article |
author |
Rengevych, O.V. Beketov, G.V. Ushenin, Yu.V. |
spellingShingle |
Rengevych, O.V. Beketov, G.V. Ushenin, Yu.V. Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Rengevych, O.V. Beketov, G.V. Ushenin, Yu.V. |
author_sort |
Rengevych, O.V. |
title |
Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy |
title_short |
Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy |
title_full |
Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy |
title_fullStr |
Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy |
title_full_unstemmed |
Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy |
title_sort |
visualization of submicron si-rods by spr-enhanced total internal reflection microscopy |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2014 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/118417 |
citation_txt |
Visualization of submicron Si-rods
by SPR-enhanced total internal reflection microscopy / O.V. Rengevych, G.V. Beketov, Yu.V. Ushenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 368-373. — Бібліогр.: 31 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT rengevychov visualizationofsubmicronsirodsbysprenhancedtotalinternalreflectionmicroscopy AT beketovgv visualizationofsubmicronsirodsbysprenhancedtotalinternalreflectionmicroscopy AT usheninyuv visualizationofsubmicronsirodsbysprenhancedtotalinternalreflectionmicroscopy |
first_indexed |
2023-10-18T20:32:05Z |
last_indexed |
2023-10-18T20:32:05Z |
_version_ |
1796150452606205952 |