Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects

• Дата: 2014
• Автори: Vlaskina, S.I., Mishinova, G.N., Rodionov, V.E., Svechnikov, G.S.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/118419
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects / S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ.

Phase transformations of SiC crystals and thin films with in-grown original defects have been studied. The analysis of absorption, excitation and low-temperature photoluminescence spectra testifies to formation of new micro-phases during the growth. The complex spectra can be decomposed into simi...