Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects
Phase transformations of SiC crystals and thin films with in-grown original defects have been studied. The analysis of absorption, excitation and low-temperature photoluminescence spectra testifies to formation of new micro-phases during the growth. The complex spectra can be decomposed into simi...
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| Дата: | 2014 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118419 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects / S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1184192017-05-31T03:06:06Z Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects Vlaskina, S.I. Mishinova, G.N. Rodionov, V.E. Svechnikov, G.S. Phase transformations of SiC crystals and thin films with in-grown original defects have been studied. The analysis of absorption, excitation and low-temperature photoluminescence spectra testifies to formation of new micro-phases during the growth. The complex spectra can be decomposed into similar structure-constituting spectra shifted against each other on the energy scale. These spectra are indicative of formation of new nanophases. Taking into account the position of the short-wave edge in the zerophonon part of the SF-i spectra as well as the position of corresponding excitation spectra and placing them on the well-known linear dependence of the exciton gap (Egx) on the percentage of hexagonally in different polytypic structures, one can obtain a hint to the percentage of hexagonally in the new metastable structures appearing in the 6H (33) matrix or in the growth process. The SF spectra are indicative of the appearance of these metastable structures. 2014 Article Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects / S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 64.70.K-, 78.60.Lc, 81.30.-t http://dspace.nbuv.gov.ua/handle/123456789/118419 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Phase transformations of SiC crystals and thin films with in-grown original
defects have been studied. The analysis of absorption, excitation and low-temperature
photoluminescence spectra testifies to formation of new micro-phases during the growth.
The complex spectra can be decomposed into similar structure-constituting spectra
shifted against each other on the energy scale. These spectra are indicative of formation
of new nanophases. Taking into account the position of the short-wave edge in the zerophonon
part of the SF-i spectra as well as the position of corresponding excitation spectra
and placing them on the well-known linear dependence of the exciton gap (Egx) on the
percentage of hexagonally in different polytypic structures, one can obtain a hint to the
percentage of hexagonally in the new metastable structures appearing in the 6H (33)
matrix or in the growth process. The SF spectra are indicative of the appearance of these
metastable structures. |
| format |
Article |
| author |
Vlaskina, S.I. Mishinova, G.N. Rodionov, V.E. Svechnikov, G.S. |
| spellingShingle |
Vlaskina, S.I. Mishinova, G.N. Rodionov, V.E. Svechnikov, G.S. Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vlaskina, S.I. Mishinova, G.N. Rodionov, V.E. Svechnikov, G.S. |
| author_sort |
Vlaskina, S.I. |
| title |
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| title_short |
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| title_full |
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| title_fullStr |
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| title_full_unstemmed |
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects |
| title_sort |
peculiarities of phase transformations in sic crystals and thin films with in-grown original defects |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118419 |
| citation_txt |
Peculiarities of phase transformations in SiC crystals and thin films
with in-grown original defects / S.I. Vlaskina, G.N. Mishinova, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 380-383. — Бібліогр.: 12 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT vlaskinasi peculiaritiesofphasetransformationsinsiccrystalsandthinfilmswithingrownoriginaldefects AT mishinovagn peculiaritiesofphasetransformationsinsiccrystalsandthinfilmswithingrownoriginaldefects AT rodionovve peculiaritiesofphasetransformationsinsiccrystalsandthinfilmswithingrownoriginaldefects AT svechnikovgs peculiaritiesofphasetransformationsinsiccrystalsandthinfilmswithingrownoriginaldefects |
| first_indexed |
2023-10-18T20:32:17Z |
| last_indexed |
2023-10-18T20:32:17Z |
| _version_ |
1796150452815921152 |