Heterostructure ohmic contacts to p-CdTe polycrystalline films

• Main Authors: Sukach, A.V., Tetyorkin, V.V., Tkachuk, A.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Series: Semiconductor Physics Quantum Electronics & Optoelectronics
• Online Access: http://dspace.nbuv.gov.ua/handle/123456789/118495

Heterostructure contacts p⁺ -PbTe/p-CdTe were prepared using the hot-wall technique on glassceramic substrates. It has been shown that the potential barrier at the p⁺ -PbTe/p-CdTe interface is not formed in the case of heavily doped lead telluride. That allows one to create ohmic heterocontacts of metal-p⁺ -PbTe/p-CdTe type. The transverse and in-plane transport of carriers has been investigated as a function of bias voltage and temperature. The current-voltage characteristics measured for the transverse arrangement of contacts exhibited ohmic behavior. The current-voltage characteristics of these contacts are determined by unipolar injection of holes from p⁺ -PbTe into p-CdTe. The inplane transport has been explained by presence of potential barriers at the grain boundaries. The potential barrier height has been estimated to be ~0.1 eV at room temperature. The mechanism of carrier transport is thermionic emission.