Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment

Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment

The effect of HF and H₂O₂ vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures have been studied using FTIR, electron-spin resonance (EPR) and PL measurements. As a result of HF vapor treatment, considerable PL inten...

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Бібліографічні деталі
Дата:2010
Автори: Dan’ko, V.A., Bratus, V.Ya., Indutnyi, I.Z., Lisovskyy, I.P., Zlobin, S.O., Michailovska, K.V., Shepeliavyi, P.E.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118561
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment / V.A. Dan’ko, V.Ya. Bratus’, I.Z. Indutnyi, I.P. Lisovskyy, S.O. Zlobin, K.V. Michailovska, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 413-417. — Бібліогр.: 22 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1185612017-05-31T03:05:14Z Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment Dan’ko, V.A. Bratus, V.Ya. Indutnyi, I.Z. Lisovskyy, I.P. Zlobin, S.O. Michailovska, K.V. Shepeliavyi, P.E. The effect of HF and H₂O₂ vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures have been studied using FTIR, electron-spin resonance (EPR) and PL measurements. As a result of HF vapor treatment, considerable PL intensity growth and blueshift of PL peak position are observed. It is suggested that the evolution of the PL spectra in HF vapor-treated samples can be attributed to selective-etching-induced decrease in Si nanoparticle dimensions and to passivation of Si dangling bonds (that are nonradiative recombination trap states) by hydrogen and oxygen. Additional treatment in H₂O₂ vapor results in additional nc-Si surface oxidation and reduction of nc-Si size. The possibility to control the PL characteristics (peak position and intensity) of the porous nc-Si–SiOx structures in a wide range by above treatments is shown. 2010 Article Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment / V.A. Dan’ko, V.Ya. Bratus’, I.Z. Indutnyi, I.P. Lisovskyy, S.O. Zlobin, K.V. Michailovska, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 413-417. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 78.55.Mb, 79.60.Jv, 81.40.Ef http://dspace.nbuv.gov.ua/handle/123456789/118561 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The effect of HF and H₂O₂ vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures have been studied using FTIR, electron-spin resonance (EPR) and PL measurements. As a result of HF vapor treatment, considerable PL intensity growth and blueshift of PL peak position are observed. It is suggested that the evolution of the PL spectra in HF vapor-treated samples can be attributed to selective-etching-induced decrease in Si nanoparticle dimensions and to passivation of Si dangling bonds (that are nonradiative recombination trap states) by hydrogen and oxygen. Additional treatment in H₂O₂ vapor results in additional nc-Si surface oxidation and reduction of nc-Si size. The possibility to control the PL characteristics (peak position and intensity) of the porous nc-Si–SiOx structures in a wide range by above treatments is shown.
format Article
author Dan’ko, V.A.
Bratus, V.Ya.
Indutnyi, I.Z.
Lisovskyy, I.P.
Zlobin, S.O.
Michailovska, K.V.
Shepeliavyi, P.E.
spellingShingle Dan’ko, V.A.
Bratus, V.Ya.
Indutnyi, I.Z.
Lisovskyy, I.P.
Zlobin, S.O.
Michailovska, K.V.
Shepeliavyi, P.E.
Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Dan’ko, V.A.
Bratus, V.Ya.
Indutnyi, I.Z.
Lisovskyy, I.P.
Zlobin, S.O.
Michailovska, K.V.
Shepeliavyi, P.E.
author_sort Dan’ko, V.A.
title Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment
title_short Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment
title_full Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment
title_fullStr Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment
title_full_unstemmed Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment
title_sort controlling the photoluminescence spectra of porous nc-si–siox structures by vapor treatment
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2010
url http://dspace.nbuv.gov.ua/handle/123456789/118561
citation_txt Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment / V.A. Dan’ko, V.Ya. Bratus’, I.Z. Indutnyi, I.P. Lisovskyy, S.O. Zlobin, K.V. Michailovska, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 413-417. — Бібліогр.: 22 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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last_indexed 2023-10-18T20:32:31Z
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