Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers
The results of studies of the spectral characteristics of the m-n⁰-n-structure with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygendoped AlGaAs layers are presented. It is experimentally revealed that own defects and oxygen impurities introduced into the thin act...
Збережено в:
| Дата: | 2008 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118592 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, R.A. Saidova, A.A. Yakubov// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 26-28. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The results of studies of the spectral characteristics of the m-n⁰-n-structure
with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygendoped
AlGaAs layers are presented. It is experimentally revealed that own defects and
oxygen impurities introduced into the thin active n-area, whose thickness is about the
diffusion length, promote the greater photoresponse in the impurity spectral band (1.2
and 1.55 µm). At the same time, impurities present in GaInAs at the background level
can be excited, although ineffectively, from the quasineutral part of the active region
depleted by the blocking voltage. |
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