Features of growing epitaxial layers from solid solutions based on indium and aluminium arsenides

за авторством Yodgorova, D.M., Karimov, A.V.
Опубліковано 2004

Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction

за авторством Karimov, A.V., Yodgorova, D.M.
Опубліковано 2005

Research of structures with corrugated photoreceiving surface

за авторством Karimov, A.V., Yodgorova, D.M., Yakubov, E.N.
Опубліковано 2004

Determination of potential distribution in a three-barrier structure

за авторством Yodgorova, D.M., Zoirova, L.X., Karimov, A.V.
Опубліковано 2006

Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base

за авторством Yodgorova, D.M., Karimov, A.V., Giyasova, F.A., Karimova, D.A.
Опубліковано 2008

Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features

за авторством Dmitruk, N.L., Karimov, A.V., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V.
Опубліковано 2005

Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers

за авторством Yodgorova, D.M., Karimov, A.V., Giyasova, F.A., Saidova, R.A., Yakubov, A.A.
Опубліковано 2008