Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

• Дата: 2009
• Автори: Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/118612
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk, S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy, V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L. Rebohle, W. Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 98-104 — Бібліогр.: 26 назв. — англ.

In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on electroluminescence and durability of SiO2 (Si,C) - Si-system is studied. Combined measurements of charge trapping and EL intensity as a function of the injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence. EL was demonstrated to have defect-related nature. Cross-sections of both electron traps and hole traps were determined. EL quenching at great levels of injected charge is associated with strong negative charge capture, following capture of positive charge leading to electrical breakdown of SiO₂ structures.