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Electrical properties of fast cooled inse single crystals

Influence of fast cooling on electrical properties of n-InSe single crystals is investigated for an ingot grown by the Bridgman method. Electrical characteristics and their anisotropy are investigated in the temperature range 80 to 410 K. It is found that fast cooling, as soon as crystallization...

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Bibliographic Details
Main Authors: Zaslonkin, A.V., Kovalyuk, Z.D., Mintyanskii, I.V., Savitskii, P.I.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118658
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