Photostimulated etching of germanium chalcogenide films

The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral dependence is correlated with absorption in the film at the absorption edge....

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2012
Автори: Dan’ko, V.A., Indutnyi, I.Z., Myn’ko, V.I., Shepeliavyi, P.E., Lukyanyuk, M.V., Litvin, O.S.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118724
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118724
record_format dspace
spelling irk-123456789-1187242017-06-01T03:04:56Z Photostimulated etching of germanium chalcogenide films Dan’ko, V.A. Indutnyi, I.Z. Myn’ko, V.I. Shepeliavyi, P.E. Lukyanyuk, M.V. Litvin, O.S. The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral dependence is correlated with absorption in the film at the absorption edge. A possible mechanism for the photoinduced etching of ChG films has been discussed. The high-frequency diffraction gratings on germanium ChG – more environmentally acceptable compounds than traditionally used arsenic chalcogenides – were recorded using the method of interference immersion photolithography with photoinduced etching. 2012 Article Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 81.65.Cf http://dspace.nbuv.gov.ua/handle/123456789/118724 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral dependence is correlated with absorption in the film at the absorption edge. A possible mechanism for the photoinduced etching of ChG films has been discussed. The high-frequency diffraction gratings on germanium ChG – more environmentally acceptable compounds than traditionally used arsenic chalcogenides – were recorded using the method of interference immersion photolithography with photoinduced etching.
format Article
author Dan’ko, V.A.
Indutnyi, I.Z.
Myn’ko, V.I.
Shepeliavyi, P.E.
Lukyanyuk, M.V.
Litvin, O.S.
spellingShingle Dan’ko, V.A.
Indutnyi, I.Z.
Myn’ko, V.I.
Shepeliavyi, P.E.
Lukyanyuk, M.V.
Litvin, O.S.
Photostimulated etching of germanium chalcogenide films
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Dan’ko, V.A.
Indutnyi, I.Z.
Myn’ko, V.I.
Shepeliavyi, P.E.
Lukyanyuk, M.V.
Litvin, O.S.
author_sort Dan’ko, V.A.
title Photostimulated etching of germanium chalcogenide films
title_short Photostimulated etching of germanium chalcogenide films
title_full Photostimulated etching of germanium chalcogenide films
title_fullStr Photostimulated etching of germanium chalcogenide films
title_full_unstemmed Photostimulated etching of germanium chalcogenide films
title_sort photostimulated etching of germanium chalcogenide films
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2012
url http://dspace.nbuv.gov.ua/handle/123456789/118724
citation_txt Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT dankova photostimulatedetchingofgermaniumchalcogenidefilms
AT indutnyiiz photostimulatedetchingofgermaniumchalcogenidefilms
AT mynkovi photostimulatedetchingofgermaniumchalcogenidefilms
AT shepeliavyipe photostimulatedetchingofgermaniumchalcogenidefilms
AT lukyanyukmv photostimulatedetchingofgermaniumchalcogenidefilms
AT litvinos photostimulatedetchingofgermaniumchalcogenidefilms
first_indexed 2023-10-18T20:32:16Z
last_indexed 2023-10-18T20:32:16Z
_version_ 1796150464497057792