Photostimulated etching of germanium chalcogenide films
The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral dependence is correlated with absorption in the film at the absorption edge....
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Дата: | 2012 |
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Автори: | , , , , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118724 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ. |
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irk-123456789-1187242017-06-01T03:04:56Z Photostimulated etching of germanium chalcogenide films Dan’ko, V.A. Indutnyi, I.Z. Myn’ko, V.I. Shepeliavyi, P.E. Lukyanyuk, M.V. Litvin, O.S. The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral dependence is correlated with absorption in the film at the absorption edge. A possible mechanism for the photoinduced etching of ChG films has been discussed. The high-frequency diffraction gratings on germanium ChG – more environmentally acceptable compounds than traditionally used arsenic chalcogenides – were recorded using the method of interference immersion photolithography with photoinduced etching. 2012 Article Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 81.65.Cf http://dspace.nbuv.gov.ua/handle/123456789/118724 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
The new effect of photostimulated dissolution of as-evaporated and annealed
Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate
increases with the illumination intensity, and its spectral dependence is correlated with
absorption in the film at the absorption edge. A possible mechanism for the photoinduced
etching of ChG films has been discussed. The high-frequency diffraction gratings on
germanium ChG – more environmentally acceptable compounds than traditionally used
arsenic chalcogenides – were recorded using the method of interference immersion
photolithography with photoinduced etching. |
format |
Article |
author |
Dan’ko, V.A. Indutnyi, I.Z. Myn’ko, V.I. Shepeliavyi, P.E. Lukyanyuk, M.V. Litvin, O.S. |
spellingShingle |
Dan’ko, V.A. Indutnyi, I.Z. Myn’ko, V.I. Shepeliavyi, P.E. Lukyanyuk, M.V. Litvin, O.S. Photostimulated etching of germanium chalcogenide films Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Dan’ko, V.A. Indutnyi, I.Z. Myn’ko, V.I. Shepeliavyi, P.E. Lukyanyuk, M.V. Litvin, O.S. |
author_sort |
Dan’ko, V.A. |
title |
Photostimulated etching of germanium chalcogenide films |
title_short |
Photostimulated etching of germanium chalcogenide films |
title_full |
Photostimulated etching of germanium chalcogenide films |
title_fullStr |
Photostimulated etching of germanium chalcogenide films |
title_full_unstemmed |
Photostimulated etching of germanium chalcogenide films |
title_sort |
photostimulated etching of germanium chalcogenide films |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2012 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/118724 |
citation_txt |
Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT dankova photostimulatedetchingofgermaniumchalcogenidefilms AT indutnyiiz photostimulatedetchingofgermaniumchalcogenidefilms AT mynkovi photostimulatedetchingofgermaniumchalcogenidefilms AT shepeliavyipe photostimulatedetchingofgermaniumchalcogenidefilms AT lukyanyukmv photostimulatedetchingofgermaniumchalcogenidefilms AT litvinos photostimulatedetchingofgermaniumchalcogenidefilms |
first_indexed |
2023-10-18T20:32:16Z |
last_indexed |
2023-10-18T20:32:16Z |
_version_ |
1796150464497057792 |