Two-dimensional modeling the static parameters for a submicron field-effect transistor
A comparison of two different models for simulation of submicron GaAs MESFETs static characteristics has been made. A new two-dimensional numerical model is presented to investigate the submicron field-effect transistor characteristics, the influence of the geometry of the component, like the int...
Збережено в:
| Дата: | 2009 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118847 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Two-dimensional modeling the static parameters for a submicron field-effect transistor / M. Zaabat, M. Draid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 417-420. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118847 |
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dspace |
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irk-123456789-1188472017-06-01T03:06:26Z Two-dimensional modeling the static parameters for a submicron field-effect transistor Zaabat, M. Draid, M. A comparison of two different models for simulation of submicron GaAs MESFETs static characteristics has been made. A new two-dimensional numerical model is presented to investigate the submicron field-effect transistor characteristics, the influence of the geometry of the component, like the inter-electrode distance, on the capacities. All simulation revealed the existence of a high contact electric field near the gate, which creates a depopulated zone around the gate, but the preceding studies have neglected the edge effects, which are very significant for the submicron MESFETs. 2009 Article Two-dimensional modeling the static parameters for a submicron field-effect transistor / M. Zaabat, M. Draid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 417-420. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 85.30.Tv http://dspace.nbuv.gov.ua/handle/123456789/118847 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A comparison of two different models for simulation of submicron GaAs
MESFETs static characteristics has been made. A new two-dimensional numerical model
is presented to investigate the submicron field-effect transistor characteristics, the
influence of the geometry of the component, like the inter-electrode distance, on the
capacities. All simulation revealed the existence of a high contact electric field near the
gate, which creates a depopulated zone around the gate, but the preceding studies have
neglected the edge effects, which are very significant for the submicron MESFETs. |
| format |
Article |
| author |
Zaabat, M. Draid, M. |
| spellingShingle |
Zaabat, M. Draid, M. Two-dimensional modeling the static parameters for a submicron field-effect transistor Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Zaabat, M. Draid, M. |
| author_sort |
Zaabat, M. |
| title |
Two-dimensional modeling the static parameters for a submicron field-effect transistor |
| title_short |
Two-dimensional modeling the static parameters for a submicron field-effect transistor |
| title_full |
Two-dimensional modeling the static parameters for a submicron field-effect transistor |
| title_fullStr |
Two-dimensional modeling the static parameters for a submicron field-effect transistor |
| title_full_unstemmed |
Two-dimensional modeling the static parameters for a submicron field-effect transistor |
| title_sort |
two-dimensional modeling the static parameters for a submicron field-effect transistor |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118847 |
| citation_txt |
Two-dimensional modeling the static parameters
for a submicron field-effect transistor / M. Zaabat, M. Draid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 417-420. — Бібліогр.: 10 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT zaabatm twodimensionalmodelingthestaticparametersforasubmicronfieldeffecttransistor AT draidm twodimensionalmodelingthestaticparametersforasubmicronfieldeffecttransistor |
| first_indexed |
2023-10-18T20:33:08Z |
| last_indexed |
2023-10-18T20:33:08Z |
| _version_ |
1796150500103553024 |