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Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers

The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro- and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxi...

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Bibliographic Details
Main Authors: Nazarov, A.N., Lysenko, V.S., Nazarova, T.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118855
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