Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers
The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro- and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxi...
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| Дата: | 2008 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118855 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers / A.N. Nazarov, V.S. Lysenko, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 101-123. — Бібліогр.: 143 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118855 |
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dspace |
| spelling |
irk-123456789-1188552017-06-01T03:06:58Z Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers Nazarov, A.N. Lysenko, V.S. Nazarova, T.M. The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro- and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO₂-Si interface and SiO₂-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing of vacancy defects and the implanted impurity activation in a subsurface implanted silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured light emitting materials. 2008 Article Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers / A.N. Nazarov, V.S. Lysenko, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 101-123. — Бібліогр.: 143 назв. — англ. 1560-8034 PACS 52.77.-j, 61.72.Tt, 68.55.Jk, 73.63.-b http://dspace.nbuv.gov.ua/handle/123456789/118855 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The review concentrates on the analysis of the RF hydrogen plasma effect on
thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern
basis of micro- and nanoelectronics. The especial attention is paid to athermic
mechanisms of transformation of defects in dioxide, SiO₂-Si interface and SiO₂-Si
nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing
of vacancy defects and the implanted impurity activation in a subsurface implanted
silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured
light emitting materials. |
| format |
Article |
| author |
Nazarov, A.N. Lysenko, V.S. Nazarova, T.M. |
| spellingShingle |
Nazarov, A.N. Lysenko, V.S. Nazarova, T.M. Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Nazarov, A.N. Lysenko, V.S. Nazarova, T.M. |
| author_sort |
Nazarov, A.N. |
| title |
Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers |
| title_short |
Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers |
| title_full |
Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers |
| title_fullStr |
Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers |
| title_full_unstemmed |
Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers |
| title_sort |
hydrogen plasma treatment of silicon thin-film structures and nanostructured layers |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2008 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118855 |
| citation_txt |
Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers / A.N. Nazarov, V.S. Lysenko, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 101-123. — Бібліогр.: 143 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT nazarovan hydrogenplasmatreatmentofsiliconthinfilmstructuresandnanostructuredlayers AT lysenkovs hydrogenplasmatreatmentofsiliconthinfilmstructuresandnanostructuredlayers AT nazarovatm hydrogenplasmatreatmentofsiliconthinfilmstructuresandnanostructuredlayers |
| first_indexed |
2023-10-18T20:33:09Z |
| last_indexed |
2023-10-18T20:33:09Z |
| _version_ |
1796150500949753856 |