2025-02-23T13:54:36-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118855%22&qt=morelikethis&rows=5
2025-02-23T13:54:36-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118855%22&qt=morelikethis&rows=5
2025-02-23T13:54:36-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T13:54:36-05:00 DEBUG: Deserialized SOLR response

Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers

The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro- and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxi...

Full description

Saved in:
Bibliographic Details
Main Authors: Nazarov, A.N., Lysenko, V.S., Nazarova, T.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118855
Tags: Add Tag
No Tags, Be the first to tag this record!
id irk-123456789-118855
record_format dspace
spelling irk-123456789-1188552017-06-01T03:06:58Z Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers Nazarov, A.N. Lysenko, V.S. Nazarova, T.M. The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro- and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO₂-Si interface and SiO₂-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing of vacancy defects and the implanted impurity activation in a subsurface implanted silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured light emitting materials. 2008 Article Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers / A.N. Nazarov, V.S. Lysenko, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 101-123. — Бібліогр.: 143 назв. — англ. 1560-8034 PACS 52.77.-j, 61.72.Tt, 68.55.Jk, 73.63.-b http://dspace.nbuv.gov.ua/handle/123456789/118855 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro- and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO₂-Si interface and SiO₂-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing of vacancy defects and the implanted impurity activation in a subsurface implanted silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured light emitting materials.
format Article
author Nazarov, A.N.
Lysenko, V.S.
Nazarova, T.M.
spellingShingle Nazarov, A.N.
Lysenko, V.S.
Nazarova, T.M.
Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Nazarov, A.N.
Lysenko, V.S.
Nazarova, T.M.
author_sort Nazarov, A.N.
title Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers
title_short Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers
title_full Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers
title_fullStr Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers
title_full_unstemmed Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers
title_sort hydrogen plasma treatment of silicon thin-film structures and nanostructured layers
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2008
url http://dspace.nbuv.gov.ua/handle/123456789/118855
citation_txt Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers / A.N. Nazarov, V.S. Lysenko, T.M. Nazarova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 101-123. — Бібліогр.: 143 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT nazarovan hydrogenplasmatreatmentofsiliconthinfilmstructuresandnanostructuredlayers
AT lysenkovs hydrogenplasmatreatmentofsiliconthinfilmstructuresandnanostructuredlayers
AT nazarovatm hydrogenplasmatreatmentofsiliconthinfilmstructuresandnanostructuredlayers
first_indexed 2023-10-18T20:33:09Z
last_indexed 2023-10-18T20:33:09Z
_version_ 1796150500949753856