Semiconductor sensors for dosimetry of epithermal neutrons

Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes on the base of high purity silicon were used at present work, and, as a result,...

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Збережено в:
Бібліографічні деталі
Дата:1999
Автори: Litovchenko, P.G., Moss, R., Stecher-Rasmussen, F., Appelman, K., Barabash, L.I., Kibkalo, T.I., Lastovetsky, V.F., Litovchenko, A.P., Pinkovska, M.B.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119067
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Semiconductor sensors for dosimetry of epithermal neutrons / P.G. Litovchenko, R. Moss, F. Stecher-Rasmussen, K. Appelman, L.I. Barabash, T.I. Kibkalo, V.F. Lastovetsky, A.P. Litovchenko, M.B. Pinkovska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 90-91. — Бібліогр.: 4 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Резюме:Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes on the base of high purity silicon were used at present work, and, as a result, we have obtained considerably more sensitive sensors for more wide range of neutron doses. The sensitivity of sensors is 0.14 V/Gy for average neutron energy of 24 keV.