Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Ef...

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Дата:2008
Автори: Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119072
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk , S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy , V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L.Rebohle, W.Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 319-323. — Бібліогр.: 27 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-119072
record_format dspace
spelling irk-123456789-1190722017-06-04T03:03:08Z Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions Nazarov, A.N. Osiyuk, I.N. Tiagulskyi, S.I. Lysenko, V.S. Tyagulskyy, I.P. Torbin, V.N. Omelchuk, V.V. Nazarova, T.N. Rebohle, L. Skorupa, W. In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on electroluminescent and durability of SiO₂ (Si,C) - Si-system is studied. Combined measurements of charge trapping and EL intensity as a function of the injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence. EL was demonstrated to have defect-related nature. Cross sections of both electron traps and hole traps were determined. EL quenching at a great levels of injected charge is associated with strong negative charge capture, following capture of positive charge leading to electrical breakdown of SiO₂ structures. 2008 Article Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk , S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy , V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L.Rebohle, W.Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 319-323. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 68.35,78.55 http://dspace.nbuv.gov.ua/handle/123456789/119072 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on electroluminescent and durability of SiO₂ (Si,C) - Si-system is studied. Combined measurements of charge trapping and EL intensity as a function of the injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence. EL was demonstrated to have defect-related nature. Cross sections of both electron traps and hole traps were determined. EL quenching at a great levels of injected charge is associated with strong negative charge capture, following capture of positive charge leading to electrical breakdown of SiO₂ structures.
format Article
author Nazarov, A.N.
Osiyuk, I.N.
Tiagulskyi, S.I.
Lysenko, V.S.
Tyagulskyy, I.P.
Torbin, V.N.
Omelchuk, V.V.
Nazarova, T.N.
Rebohle, L.
Skorupa, W.
spellingShingle Nazarov, A.N.
Osiyuk, I.N.
Tiagulskyi, S.I.
Lysenko, V.S.
Tyagulskyy, I.P.
Torbin, V.N.
Omelchuk, V.V.
Nazarova, T.N.
Rebohle, L.
Skorupa, W.
Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Nazarov, A.N.
Osiyuk, I.N.
Tiagulskyi, S.I.
Lysenko, V.S.
Tyagulskyy, I.P.
Torbin, V.N.
Omelchuk, V.V.
Nazarova, T.N.
Rebohle, L.
Skorupa, W.
author_sort Nazarov, A.N.
title Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
title_short Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
title_full Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
title_fullStr Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
title_full_unstemmed Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
title_sort electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2008
url http://dspace.nbuv.gov.ua/handle/123456789/119072
citation_txt Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk , S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy , V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L.Rebohle, W.Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 319-323. — Бібліогр.: 27 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:33:41Z
last_indexed 2023-10-18T20:33:41Z
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