Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric

Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric

Charge trapping in ultrathin high-k Gd₂O₃ dielectric leading to appearance of hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and current-voltage techniques at different temperatures. It was shown that the large leakage current at a negative gate voltage causes t...

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Бібліографічні деталі
Дата:2008
Автори: Nazarov, A.N., Gomeniuk, Y.V., Gomeniuk, Y.Y., Lysenko, V.S., Gottlob, H.D.B., Schmidt, M., Lemme, M.C., Czernohorsky, M., Ostenc, H.J.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119074
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric / A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, V. S. Lysenko, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H. J. Ostenc // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 324-328. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-119074
record_format dspace
spelling irk-123456789-1190742017-06-04T03:03:42Z Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric Nazarov, A.N. Gomeniuk, Y.V. Gomeniuk, Y.Y. Lysenko, V.S. Gottlob, H.D.B. Schmidt, M. Lemme, M.C. Czernohorsky, M. Ostenc, H.J. Charge trapping in ultrathin high-k Gd₂O₃ dielectric leading to appearance of hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and current-voltage techniques at different temperatures. It was shown that the large leakage current at a negative gate voltage causes the reversible trapping of the positive charge in the dielectric layer, without electrical degradation of the dielectric and dielectricsemiconductor interface. The capture cross-sections of the hole traps are around 10⁻¹⁸ and 2 × 10⁻²⁰ cm² . The respective shift of the C–V curve correlates with a “plateau” at the capacitance corresponding to weak accumulation at the silicon interface. 2008 Article Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric / A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, V. S. Lysenko, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H. J. Ostenc // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 324-328. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 73.20.-r http://dspace.nbuv.gov.ua/handle/123456789/119074 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Charge trapping in ultrathin high-k Gd₂O₃ dielectric leading to appearance of hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and current-voltage techniques at different temperatures. It was shown that the large leakage current at a negative gate voltage causes the reversible trapping of the positive charge in the dielectric layer, without electrical degradation of the dielectric and dielectricsemiconductor interface. The capture cross-sections of the hole traps are around 10⁻¹⁸ and 2 × 10⁻²⁰ cm² . The respective shift of the C–V curve correlates with a “plateau” at the capacitance corresponding to weak accumulation at the silicon interface.
format Article
author Nazarov, A.N.
Gomeniuk, Y.V.
Gomeniuk, Y.Y.
Lysenko, V.S.
Gottlob, H.D.B.
Schmidt, M.
Lemme, M.C.
Czernohorsky, M.
Ostenc, H.J.
spellingShingle Nazarov, A.N.
Gomeniuk, Y.V.
Gomeniuk, Y.Y.
Lysenko, V.S.
Gottlob, H.D.B.
Schmidt, M.
Lemme, M.C.
Czernohorsky, M.
Ostenc, H.J.
Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Nazarov, A.N.
Gomeniuk, Y.V.
Gomeniuk, Y.Y.
Lysenko, V.S.
Gottlob, H.D.B.
Schmidt, M.
Lemme, M.C.
Czernohorsky, M.
Ostenc, H.J.
author_sort Nazarov, A.N.
title Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric
title_short Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric
title_full Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric
title_fullStr Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric
title_full_unstemmed Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric
title_sort novel hysteresis effect in ultrathin epitaxial gd₂o₃ high-k dielectric
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2008
url http://dspace.nbuv.gov.ua/handle/123456789/119074
citation_txt Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric / A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, V. S. Lysenko, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H. J. Ostenc // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 324-328. — Бібліогр.: 12 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT nazarovan novelhysteresiseffectinultrathinepitaxialgd2o3highkdielectric
AT gomeniukyv novelhysteresiseffectinultrathinepitaxialgd2o3highkdielectric
AT gomeniukyy novelhysteresiseffectinultrathinepitaxialgd2o3highkdielectric
AT lysenkovs novelhysteresiseffectinultrathinepitaxialgd2o3highkdielectric
AT gottlobhdb novelhysteresiseffectinultrathinepitaxialgd2o3highkdielectric
AT schmidtm novelhysteresiseffectinultrathinepitaxialgd2o3highkdielectric
AT lemmemc novelhysteresiseffectinultrathinepitaxialgd2o3highkdielectric
AT czernohorskym novelhysteresiseffectinultrathinepitaxialgd2o3highkdielectric
AT ostenchj novelhysteresiseffectinultrathinepitaxialgd2o3highkdielectric
first_indexed 2023-10-18T20:33:41Z
last_indexed 2023-10-18T20:33:41Z
_version_ 1796150521835290624

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