Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact
Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is formed. To understand processes occurring in such heterojunctions, the measurem...
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| Дата: | 2004 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119215 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact / Z.D. Kovalyuk, O.M. Sydor, V.V. Netyaga // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 360-362. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119215 |
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dspace |
| spelling |
irk-123456789-1192152017-06-06T03:03:49Z Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact Kovalyuk, Z.D. Sydor, O.M. Netyaga, V.V. Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is formed. To understand processes occurring in such heterojunctions, the measurements of current-voltage characteristics in forward and reverse directions, photoelectric modification of the direct branch of the current-voltage characteristic, capacitance-voltage characteristic, spectrum of the relative quantum efficiency have been carried out at the room temperature. The structures had a well-pronounced photovoltaic effect – the open-circuit voltage was 0.5 V and the short-circuit current density – 0.7 mА/cm². The conclusion about possibility of application of the obtained heterojunctions as photodetectors is made. 2004 Article Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact / Z.D. Kovalyuk, O.M. Sydor, V.V. Netyaga // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 360-362. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 73.40.Lq http://dspace.nbuv.gov.ua/handle/123456789/119215 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is formed. To understand processes occurring in such heterojunctions, the measurements of current-voltage characteristics in forward and reverse directions, photoelectric modification of the direct branch of the current-voltage characteristic, capacitance-voltage characteristic, spectrum of the relative quantum efficiency have been carried out at the room temperature. The structures had a well-pronounced photovoltaic effect – the open-circuit voltage was 0.5 V and the short-circuit current density – 0.7 mА/cm². The conclusion about possibility of application of the obtained heterojunctions as photodetectors is made. |
| format |
Article |
| author |
Kovalyuk, Z.D. Sydor, O.M. Netyaga, V.V. |
| spellingShingle |
Kovalyuk, Z.D. Sydor, O.M. Netyaga, V.V. Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kovalyuk, Z.D. Sydor, O.M. Netyaga, V.V. |
| author_sort |
Kovalyuk, Z.D. |
| title |
Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact |
| title_short |
Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact |
| title_full |
Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact |
| title_fullStr |
Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact |
| title_full_unstemmed |
Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact |
| title_sort |
electrical and photoelectrical properties of n-inse/p-cuinse₂ optical contact |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119215 |
| citation_txt |
Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact / Z.D. Kovalyuk, O.M. Sydor, V.V. Netyaga // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 360-362. — Бібліогр.: 10 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT kovalyukzd electricalandphotoelectricalpropertiesofninsepcuinse2opticalcontact AT sydorom electricalandphotoelectricalpropertiesofninsepcuinse2opticalcontact AT netyagavv electricalandphotoelectricalpropertiesofninsepcuinse2opticalcontact |
| first_indexed |
2023-10-18T20:34:02Z |
| last_indexed |
2023-10-18T20:34:02Z |
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1796150536858238976 |