Active layer – semi-insulating substrate interface effect on GaAs MESFET components
This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space charge at the interface active layer – semi-insulating substrate is applied to det...
Збережено в:
| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| Дата: | 2004 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119217 |
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| Цитувати: | Active layer – semi-insulating substrate interface effect on GaAs MESFET components / M. Belgat, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 368-371. — Бібліогр.: 6 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119217 |
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dspace |
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irk-123456789-1192172017-06-06T03:03:51Z Active layer – semi-insulating substrate interface effect on GaAs MESFET components Belgat, M. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space charge at the interface active layer – semi-insulating substrate is applied to determine the active layer and interface parameters. The properties of the drain current and the output admittance characteristics as well as the physical phenomena inherent to this interface are assigned to the dynamic response of the double space charge region. 2004 Article Active layer – semi-insulating substrate interface effect on GaAs MESFET components / M. Belgat, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 368-371. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 68.35.-p, 68.35.Ct http://dspace.nbuv.gov.ua/handle/123456789/119217 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space charge at the interface active layer – semi-insulating substrate is applied to determine the active layer and interface parameters. The properties of the drain current and the output admittance characteristics as well as the physical phenomena inherent to this interface are assigned to the dynamic response of the double space charge region. |
| format |
Article |
| author |
Belgat, M. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. |
| spellingShingle |
Belgat, M. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. Active layer – semi-insulating substrate interface effect on GaAs MESFET components Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Belgat, M. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. |
| author_sort |
Belgat, M. |
| title |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components |
| title_short |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components |
| title_full |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components |
| title_fullStr |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components |
| title_full_unstemmed |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components |
| title_sort |
active layer – semi-insulating substrate interface effect on gaas mesfet components |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119217 |
| citation_txt |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components / M. Belgat, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 368-371. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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