Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon

Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon

Complex of X-ray diffractometrical investigations, both angular and spectral dependences of a reflectivity for quasi-forbidden reflections, enable not only to discover structural microdefects and to measure their radii r as well as concentration n, but also to determine the level of nonstoichiometry...

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Бібліографічні деталі
Дата:2001
Автори: Datsenko, L.I., Klad’ko, V.P., Lytvyn, P.M., Domagala, J., Machulin, V.F., Prokopenko, I.V., Molodkin, V.B., Maksimenko, Z.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119262
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon / L.I. Datsenko, V.P. Klad’ko, P.M. Lytvyn, J. Domagala, V.F. Machulin, I.V. Prokopenko, V.B. Molodkin, Z.V. Maksimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 146-151. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1192622017-06-06T03:03:20Z Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon Datsenko, L.I. Klad’ko, V.P. Lytvyn, P.M. Domagala, J. Machulin, V.F. Prokopenko, I.V. Molodkin, V.B. Maksimenko, Z.V. Complex of X-ray diffractometrical investigations, both angular and spectral dependences of a reflectivity for quasi-forbidden reflections, enable not only to discover structural microdefects and to measure their radii r as well as concentration n, but also to determine the level of nonstoichiometry, , where are concentrations of lattice components A and B, respectively. In the case of angular dependencies, the two-dimensional maps of diffuse scattering in a reciprocal space for a characteristic radiation were plotted for GaAs:Si/GaAs films heavily doped by Si (up to 10²⁰ cm⁻³) using a three-crystal spectrometer (TCS). In the case of spectral (energy) dependencies, reflectivity were measured using a single crystal spectrometer (SCS) and white beam radiation. In both cases the formulae of the Molodkin dynamical scattering theory developed for real crystals with homogeneously distributed microdefects were used by the fitting procedure of the calculated intensities to those measured using TCS or SCS for (200) and (400) reflections of X-rays. The TCS maps were registred for Cu Ka - radiation by the Phillips three-crystal diffractometer. Good agreement between the two groups of the and parameters of microdefects (precipita¬tes) was shown for some GaAs film (r₁ = 3.5 mm, n₁ = 4.3*10⁶ cm⁻³; r₂ = 4.8 μm, n₂ = 9.4*10⁶ cm⁻³) . Parameter D = 0.009 (Ga excess) was determined too. 2001 Article Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon / L.I. Datsenko, V.P. Klad’ko, P.M. Lytvyn, J. Domagala, V.F. Machulin, I.V. Prokopenko, V.B. Molodkin, Z.V. Maksimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 146-151. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 61.10 Eq, 61.66 Fn, 61.72 Dd http://dspace.nbuv.gov.ua/handle/123456789/119262 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Complex of X-ray diffractometrical investigations, both angular and spectral dependences of a reflectivity for quasi-forbidden reflections, enable not only to discover structural microdefects and to measure their radii r as well as concentration n, but also to determine the level of nonstoichiometry, , where are concentrations of lattice components A and B, respectively. In the case of angular dependencies, the two-dimensional maps of diffuse scattering in a reciprocal space for a characteristic radiation were plotted for GaAs:Si/GaAs films heavily doped by Si (up to 10²⁰ cm⁻³) using a three-crystal spectrometer (TCS). In the case of spectral (energy) dependencies, reflectivity were measured using a single crystal spectrometer (SCS) and white beam radiation. In both cases the formulae of the Molodkin dynamical scattering theory developed for real crystals with homogeneously distributed microdefects were used by the fitting procedure of the calculated intensities to those measured using TCS or SCS for (200) and (400) reflections of X-rays. The TCS maps were registred for Cu Ka - radiation by the Phillips three-crystal diffractometer. Good agreement between the two groups of the and parameters of microdefects (precipita¬tes) was shown for some GaAs film (r₁ = 3.5 mm, n₁ = 4.3*10⁶ cm⁻³; r₂ = 4.8 μm, n₂ = 9.4*10⁶ cm⁻³) . Parameter D = 0.009 (Ga excess) was determined too.
format Article
author Datsenko, L.I.
Klad’ko, V.P.
Lytvyn, P.M.
Domagala, J.
Machulin, V.F.
Prokopenko, I.V.
Molodkin, V.B.
Maksimenko, Z.V.
spellingShingle Datsenko, L.I.
Klad’ko, V.P.
Lytvyn, P.M.
Domagala, J.
Machulin, V.F.
Prokopenko, I.V.
Molodkin, V.B.
Maksimenko, Z.V.
Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Datsenko, L.I.
Klad’ko, V.P.
Lytvyn, P.M.
Domagala, J.
Machulin, V.F.
Prokopenko, I.V.
Molodkin, V.B.
Maksimenko, Z.V.
author_sort Datsenko, L.I.
title Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon
title_short Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon
title_full Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon
title_fullStr Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon
title_full_unstemmed Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon
title_sort complex diffractometrical investigation of structural and compositional irregularities in gaas:si/gaas films heavily doped with silicon
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2001
url http://dspace.nbuv.gov.ua/handle/123456789/119262
citation_txt Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon / L.I. Datsenko, V.P. Klad’ko, P.M. Lytvyn, J. Domagala, V.F. Machulin, I.V. Prokopenko, V.B. Molodkin, Z.V. Maksimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 146-151. — Бібліогр.: 20 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:34:09Z
last_indexed 2023-10-18T20:34:09Z
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