2025-02-23T09:08:52-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-119262%22&qt=morelikethis&rows=5
2025-02-23T09:08:52-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-119262%22&qt=morelikethis&rows=5
2025-02-23T09:08:52-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T09:08:52-05:00 DEBUG: Deserialized SOLR response

Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon

Complex of X-ray diffractometrical investigations, both angular and spectral dependences of a reflectivity for quasi-forbidden reflections, enable not only to discover structural microdefects and to measure their radii r as well as concentration n, but also to determine the level of nonstoichiometry...

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Bibliographic Details
Main Authors: Datsenko, L.I., Klad’ko, V.P., Lytvyn, P.M., Domagala, J., Machulin, V.F., Prokopenko, I.V., Molodkin, V.B., Maksimenko, Z.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119262
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2025-02-23T09:08:52-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-119262%22&qt=morelikethis
2025-02-23T09:08:52-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-119262%22&qt=morelikethis
2025-02-23T09:08:52-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T09:08:52-05:00 DEBUG: Deserialized SOLR response