2025-02-23T13:11:53-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-119267%22&qt=morelikethis&rows=5
2025-02-23T13:11:53-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-119267%22&qt=morelikethis&rows=5
2025-02-23T13:11:53-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T13:11:53-05:00 DEBUG: Deserialized SOLR response
About influences of different actions on spectra of impurity photoluminescence in GaAs
Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown that hard data on those changes can be obtained only by a detailed study of lux-...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
|
| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/119267 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown that hard data on those changes can be obtained only by a detailed study of lux-brightness characteristics of impurity and inter-impurity bands of luminescence. Correlation changes of luminescence intensities of those bands indicate a variation of radiating centers concentration, if their dependence on excitation level in initial crystals and those subjected to external actions are the same. |
|---|