About influences of different actions on spectra of impurity photoluminescence in GaAs
Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown that hard data on those changes can be obtained only by a detailed study of lux-...
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| Дата: | 2001 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119267 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | About influences of different actions on spectra of impurity photoluminescence in GaAs / N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 168-170. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119267 |
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dspace |
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irk-123456789-1192672017-06-06T03:04:26Z About influences of different actions on spectra of impurity photoluminescence in GaAs Litovchenko, N.M. Prokhorovich, A.V. Strilchuk, O.N. Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown that hard data on those changes can be obtained only by a detailed study of lux-brightness characteristics of impurity and inter-impurity bands of luminescence. Correlation changes of luminescence intensities of those bands indicate a variation of radiating centers concentration, if their dependence on excitation level in initial crystals and those subjected to external actions are the same. 2001 Article About influences of different actions on spectra of impurity photoluminescence in GaAs / N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 168-170. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 71.55.E, 78.55.E http://dspace.nbuv.gov.ua/handle/123456789/119267 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown that hard data on those changes can be obtained only by a detailed study of lux-brightness characteristics of impurity and inter-impurity bands of luminescence. Correlation changes of luminescence intensities of those bands indicate a variation of radiating centers concentration, if their dependence on excitation level in initial crystals and those subjected to external actions are the same. |
| format |
Article |
| author |
Litovchenko, N.M. Prokhorovich, A.V. Strilchuk, O.N. |
| spellingShingle |
Litovchenko, N.M. Prokhorovich, A.V. Strilchuk, O.N. About influences of different actions on spectra of impurity photoluminescence in GaAs Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Litovchenko, N.M. Prokhorovich, A.V. Strilchuk, O.N. |
| author_sort |
Litovchenko, N.M. |
| title |
About influences of different actions on spectra of impurity photoluminescence in GaAs |
| title_short |
About influences of different actions on spectra of impurity photoluminescence in GaAs |
| title_full |
About influences of different actions on spectra of impurity photoluminescence in GaAs |
| title_fullStr |
About influences of different actions on spectra of impurity photoluminescence in GaAs |
| title_full_unstemmed |
About influences of different actions on spectra of impurity photoluminescence in GaAs |
| title_sort |
about influences of different actions on spectra of impurity photoluminescence in gaas |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2001 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119267 |
| citation_txt |
About influences of different actions on spectra of impurity photoluminescence in GaAs / N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 168-170. — Бібліогр.: 12 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:34:09Z |
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2023-10-18T20:34:09Z |
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