Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals
It was shown that thermal treatment of semi-insulating specially undoped gallium arsenide leads to significant changes of lux-brightness characteristics of inter- impurity and impurity bands in the spectra of impurity luminescence. The indicated changes are due to transformations in the system of no...
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| Дата: | 2001 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119268 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals / N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 171-172. — Бібліогр.: 3 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119268 |
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dspace |
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irk-123456789-1192682017-06-06T03:02:58Z Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals Litovchenko, N.M. Prokhorovich, A.V. Strilchuk, O.N. It was shown that thermal treatment of semi-insulating specially undoped gallium arsenide leads to significant changes of lux-brightness characteristics of inter- impurity and impurity bands in the spectra of impurity luminescence. The indicated changes are due to transformations in the system of non-radiating channels of hole recombination in it that took place in the process of thermal treatment. The effect observed can lead to variation of the correlation between the intensities of bands in the spectrum of impurity photoluminescence even if the change of concentration of luminescence centers does not occur. Such changes in lux-brightness characteristics of impurity bands should be concerned while using photoluminescence spectra for the analysis of changes occurring in impurity-deficient composition of gallium arsenide during its thermal treatment. 2001 Article Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals / N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 171-172. — Бібліогр.: 3 назв. — англ. 1560-8034 PACS: 71.55.E, 78.55.E http://dspace.nbuv.gov.ua/handle/123456789/119268 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
It was shown that thermal treatment of semi-insulating specially undoped gallium arsenide leads to significant changes of lux-brightness characteristics of inter- impurity and impurity bands in the spectra of impurity luminescence. The indicated changes are due to transformations in the system of non-radiating channels of hole recombination in it that took place in the process of thermal treatment. The effect observed can lead to variation of the correlation between the intensities of bands in the spectrum of impurity photoluminescence even if the change of concentration of luminescence centers does not occur. Such changes in lux-brightness characteristics of impurity bands should be concerned while using photoluminescence spectra for the analysis of changes occurring in impurity-deficient composition of gallium arsenide during its thermal treatment. |
| format |
Article |
| author |
Litovchenko, N.M. Prokhorovich, A.V. Strilchuk, O.N. |
| spellingShingle |
Litovchenko, N.M. Prokhorovich, A.V. Strilchuk, O.N. Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Litovchenko, N.M. Prokhorovich, A.V. Strilchuk, O.N. |
| author_sort |
Litovchenko, N.M. |
| title |
Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals |
| title_short |
Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals |
| title_full |
Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals |
| title_fullStr |
Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals |
| title_full_unstemmed |
Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals |
| title_sort |
stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped gaas crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2001 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119268 |
| citation_txt |
Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals / N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 171-172. — Бібліогр.: 3 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:34:10Z |
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2023-10-18T20:34:10Z |
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