Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons
We have studied backward degenerate four-wave mixing at CO₂ laser wavelengths in n-type Ge. Phase conjugation due to redistribution of free electrons between equivalent valleys was observed. The effect is related to carrier heating by infrared radiation.
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| Дата: | 2001 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119317 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons / V.M. Vasetskii, V.N. Poroshin, V.A. Ignatenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 260-263. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | We have studied backward degenerate four-wave mixing at CO₂ laser wavelengths in n-type Ge. Phase conjugation due to redistribution of free electrons between equivalent valleys was observed. The effect is related to carrier heating by infrared radiation. |
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