Current flow mechanisms in p-i-n structures based on cadmium telluride
Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark curre...
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| Дата: | 2002 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119566 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Current flow mechanisms in p-i-n structures based on cadmium telluride / P.M. Gorley, M.V. Demych, V.P. Makhniy, Zs.J. Horvath, V.A. Shenderovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 46-50. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119566 |
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dspace |
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irk-123456789-1195662017-06-08T03:04:03Z Current flow mechanisms in p-i-n structures based on cadmium telluride Gorley, P.M. Demych, M.V. Makhniy, V.P. Horvath, Zs.J. Shenderovsky, V.A. Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark current formation of samples studies have been defined. 2002 Article Current flow mechanisms in p-i-n structures based on cadmium telluride / P.M. Gorley, M.V. Demych, V.P. Makhniy, Zs.J. Horvath, V.A. Shenderovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 46-50. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 73.40.-c,73.40.Ty http://dspace.nbuv.gov.ua/handle/123456789/119566 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark current formation of samples studies have been defined. |
| format |
Article |
| author |
Gorley, P.M. Demych, M.V. Makhniy, V.P. Horvath, Zs.J. Shenderovsky, V.A. |
| spellingShingle |
Gorley, P.M. Demych, M.V. Makhniy, V.P. Horvath, Zs.J. Shenderovsky, V.A. Current flow mechanisms in p-i-n structures based on cadmium telluride Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gorley, P.M. Demych, M.V. Makhniy, V.P. Horvath, Zs.J. Shenderovsky, V.A. |
| author_sort |
Gorley, P.M. |
| title |
Current flow mechanisms in p-i-n structures based on cadmium telluride |
| title_short |
Current flow mechanisms in p-i-n structures based on cadmium telluride |
| title_full |
Current flow mechanisms in p-i-n structures based on cadmium telluride |
| title_fullStr |
Current flow mechanisms in p-i-n structures based on cadmium telluride |
| title_full_unstemmed |
Current flow mechanisms in p-i-n structures based on cadmium telluride |
| title_sort |
current flow mechanisms in p-i-n structures based on cadmium telluride |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119566 |
| citation_txt |
Current flow mechanisms in p-i-n structures based on cadmium telluride / P.M. Gorley, M.V. Demych, V.P. Makhniy, Zs.J. Horvath, V.A. Shenderovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 46-50. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:34:52Z |
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2023-10-18T20:34:52Z |
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