Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy

• Дата: 2013
• Автори: Galiy, P.V., Nenchuk, T.M., Ciszewski, A., Mazur, P., Zuber, S., Buzhuk, Ya.M.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2013
• Назва видання: Functional Materials
• Теми: Characterization and properties
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/119784
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy / P.V. Galiy, T.M. Nenchuk, A. Ciszewski, P. Mazur, S. Zuber, Ya.M. Buzhuk // Functional Materials. — 2013. — Т. 20, № 1. — С. 37-43. — Бібліогр.: 17 назв. — англ.

Indium deposition leads to changes in the scanning tunneling microscopy (STM)-revealed (100) surface morphology of In₄Se₃ layered semiconductor with the formation of nanostructures, which are characterized by different dimensionality dependent on different crystal growth conditions. Preferable forma...