Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy
Indium deposition leads to changes in the scanning tunneling microscopy (STM)-revealed (100) surface morphology of In₄Se₃ layered semiconductor with the formation of nanostructures, which are characterized by different dimensionality dependent on different crystal growth conditions. Preferable forma...
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| Дата: | 2013 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
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НТК «Інститут монокристалів» НАН України
2013
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| Назва видання: | Functional Materials |
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| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119784 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy / P.V. Galiy, T.M. Nenchuk, A. Ciszewski, P. Mazur, S. Zuber, Ya.M. Buzhuk // Functional Materials. — 2013. — Т. 20, № 1. — С. 37-43. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1197842017-06-10T13:09:34Z Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy Galiy, P.V. Nenchuk, T.M. Ciszewski, A. Mazur, P. Zuber, S. Buzhuk, Ya.M. Characterization and properties Indium deposition leads to changes in the scanning tunneling microscopy (STM)-revealed (100) surface morphology of In₄Se₃ layered semiconductor with the formation of nanostructures, which are characterized by different dimensionality dependent on different crystal growth conditions. Preferable formation of nanodots in low and quasi one dimensional (1D) structures for the high bulk-conductivity crystals has been observed. The STM and scanning tunneling spectroscopy data enable us to consider that the dimensionality, shape and direction of the obtained indium deposition structures are induced by indium clusters available on the original, on-the-lattice-scale furrowed, ultra high vacuum (UHV) (100) cleavages of In₄Se₃ crystal due to the self-intercalation phenomenon. 2013 Article Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy / P.V. Galiy, T.M. Nenchuk, A. Ciszewski, P. Mazur, S. Zuber, Ya.M. Buzhuk // Functional Materials. — 2013. — Т. 20, № 1. — С. 37-43. — Бібліогр.: 17 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm20.01.037 http://dspace.nbuv.gov.ua/handle/123456789/119784 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Characterization and properties Characterization and properties |
| spellingShingle |
Characterization and properties Characterization and properties Galiy, P.V. Nenchuk, T.M. Ciszewski, A. Mazur, P. Zuber, S. Buzhuk, Ya.M. Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy Functional Materials |
| description |
Indium deposition leads to changes in the scanning tunneling microscopy (STM)-revealed (100) surface morphology of In₄Se₃ layered semiconductor with the formation of nanostructures, which are characterized by different dimensionality dependent on different crystal growth conditions. Preferable formation of nanodots in low and quasi one dimensional (1D) structures for the high bulk-conductivity crystals has been observed. The STM and scanning tunneling spectroscopy data enable us to consider that the dimensionality, shape and direction of the obtained indium deposition structures are induced by indium clusters available on the original, on-the-lattice-scale furrowed, ultra high vacuum (UHV) (100) cleavages of In₄Se₃ crystal due to the self-intercalation phenomenon. |
| format |
Article |
| author |
Galiy, P.V. Nenchuk, T.M. Ciszewski, A. Mazur, P. Zuber, S. Buzhuk, Ya.M. |
| author_facet |
Galiy, P.V. Nenchuk, T.M. Ciszewski, A. Mazur, P. Zuber, S. Buzhuk, Ya.M. |
| author_sort |
Galiy, P.V. |
| title |
Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy |
| title_short |
Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy |
| title_full |
Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy |
| title_fullStr |
Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy |
| title_full_unstemmed |
Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy |
| title_sort |
indium induced nanostructures on in₄se₃(100) surface studied by scanning tunneling microscopy |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2013 |
| topic_facet |
Characterization and properties |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119784 |
| citation_txt |
Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy / P.V. Galiy, T.M. Nenchuk, A. Ciszewski, P. Mazur, S. Zuber, Ya.M. Buzhuk // Functional Materials. — 2013. — Т. 20, № 1. — С. 37-43. — Бібліогр.: 17 назв. — англ. |
| series |
Functional Materials |
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2023-10-18T20:35:25Z |
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2023-10-18T20:35:25Z |
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