Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes
The dark current and noise spectra were investigated in Hg₁₋xCdxTe (x≅0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to be correlated with tunneling current via the deep defect states in the gap at...
Збережено в:
| Дата: | 1999 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119879 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes / Z.F. Ivasiv, F.F. Sizov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 21-25. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The dark current and noise spectra were investigated in Hg₁₋xCdxTe (x≅0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to be correlated with tunneling current via the deep defect states in the gap at low reverse biases U≤0.1 V. In the photodiodes, where the tunneling current is found to be dominating, the 1/f noise is observed up to frequencies 10⁴ Hz. The decrease of tunneling current results in the decrease of 1/f noise. |
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