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Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization

Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization

The coefficient of dislocation gliding over the planes of easy glide depending on the shape of the crystallization front, is determined. The regions of non-uniform distribution of thermal field in the crystal are established. Optimized are the temperature conditions for the growth of large-size (350...

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Bibliographic Details
Main Authors: Grin, L.A., Budnikov, A.T., Sidelnikova, N.S., Adonkin, G.T., Baranov, V.V.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2013
Series:Functional Materials
Subjects:
Technology
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119907
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http://dspace.nbuv.gov.ua/handle/123456789/119907

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