Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization
The coefficient of dislocation gliding over the planes of easy glide depending on the shape of the crystallization front, is determined. The regions of non-uniform distribution of thermal field in the crystal are established. Optimized are the temperature conditions for the growth of large-size (350...
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| Дата: | 2013 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2013
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119907 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization / L.A. Grin, A.T. Budnikov, N.S. Sidelnikova, G.T. Adonkin, V.V. Baranov // Functional Materials. — 2013. — Т. 20, № 1. — С. 111-117 — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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dspace |
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irk-123456789-1199072017-06-11T03:03:00Z Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization Grin, L.A. Budnikov, A.T. Sidelnikova, N.S. Adonkin, G.T. Baranov, V.V. Technology The coefficient of dislocation gliding over the planes of easy glide depending on the shape of the crystallization front, is determined. The regions of non-uniform distribution of thermal field in the crystal are established. Optimized are the temperature conditions for the growth of large-size (350×500×45 mm³) sapphire crystals by the method of horizontally directed crystallization. The change of the density of dislocations and of their distribution in the crystal bulk after correction of the technological growth conditions, is considered. It is shown that optimization of the axial, horizontal and vertical components of the temperature gradient makes it possible to improve uniformity of the thermal field distribution at the crystallization front in the process of the stationary crystal growth. 2013 Article Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization / L.A. Grin, A.T. Budnikov, N.S. Sidelnikova, G.T. Adonkin, V.V. Baranov // Functional Materials. — 2013. — Т. 20, № 1. — С. 111-117 — Бібліогр.: 11 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm20.01.111 http://dspace.nbuv.gov.ua/handle/123456789/119907 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Technology Technology |
| spellingShingle |
Technology Technology Grin, L.A. Budnikov, A.T. Sidelnikova, N.S. Adonkin, G.T. Baranov, V.V. Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization Functional Materials |
| description |
The coefficient of dislocation gliding over the planes of easy glide depending on the shape of the crystallization front, is determined. The regions of non-uniform distribution of thermal field in the crystal are established. Optimized are the temperature conditions for the growth of large-size (350×500×45 mm³) sapphire crystals by the method of horizontally directed crystallization. The change of the density of dislocations and of their distribution in the crystal bulk after correction of the technological growth conditions, is considered. It is shown that optimization of the axial, horizontal and vertical components of the temperature gradient makes it possible to improve uniformity of the thermal field distribution at the crystallization front in the process of the stationary crystal growth. |
| format |
Article |
| author |
Grin, L.A. Budnikov, A.T. Sidelnikova, N.S. Adonkin, G.T. Baranov, V.V. |
| author_facet |
Grin, L.A. Budnikov, A.T. Sidelnikova, N.S. Adonkin, G.T. Baranov, V.V. |
| author_sort |
Grin, L.A. |
| title |
Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization |
| title_short |
Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization |
| title_full |
Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization |
| title_fullStr |
Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization |
| title_full_unstemmed |
Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization |
| title_sort |
optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2013 |
| topic_facet |
Technology |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119907 |
| citation_txt |
Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization / L.A. Grin, A.T. Budnikov, N.S. Sidelnikova, G.T. Adonkin, V.V. Baranov // Functional Materials. — 2013. — Т. 20, № 1. — С. 111-117 — Бібліогр.: 11 назв. — англ. |
| series |
Functional Materials |
| work_keys_str_mv |
AT grinla optimizationoftemperatureconditionsforthegrowthoflargesizesapphirecrystalsbythemethodofhorizontallydirectedcrystallization AT budnikovat optimizationoftemperatureconditionsforthegrowthoflargesizesapphirecrystalsbythemethodofhorizontallydirectedcrystallization AT sidelnikovans optimizationoftemperatureconditionsforthegrowthoflargesizesapphirecrystalsbythemethodofhorizontallydirectedcrystallization AT adonkingt optimizationoftemperatureconditionsforthegrowthoflargesizesapphirecrystalsbythemethodofhorizontallydirectedcrystallization AT baranovvv optimizationoftemperatureconditionsforthegrowthoflargesizesapphirecrystalsbythemethodofhorizontallydirectedcrystallization |
| first_indexed |
2023-10-18T20:35:43Z |
| last_indexed |
2023-10-18T20:35:43Z |
| _version_ |
1796150610558451712 |