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Theory of high-field electron transport in the heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with delta-doped barriers. Effect of real-space transfer
Steady-state electric characteristics of quantum heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with -doped barriers have been analyzed in this work. It has been shown that at high doping the additional low-conductive channels are formed in the barrier layers. Current-voltage characteristics of the st...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/119925 |
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