Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances von Korotyeyev, V.V.

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Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields von Syngaivska, G.I., Korotyeyev, V.V.

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Electron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN von Syngayivska, G.I., Korotyeyev, V.V.

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Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN von Korotyeyev, V.V., Syngayivska, G.I., Kochelap, V.A., Klimov, A.A.

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Interaction of sub-terahertz radiation with low-doped grating-based AlGaN/GaN plasmonic structures. Time-domain spectroscopy measurements and electrodynamic modeling von Korotyeyev, V.V., Lyaschuk, Yu.M., Kochelap, V.A., Varani, L., Coquillat, D., Danylyuk, S.В., Brose, S.В., Vitusevich, S.A.

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Be-ion-implanted p-n InSb diode for infrared applications. Modeling, fabrication, and characterization von Korotyeyev, V.V., Kochelap, V.O., Sapon, S.V., Romaniuk, B.M., Melnik, V.P., Dubikovskyi, O.V., Sabov, T.M.

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