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2025-02-23T17:54:41-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-119964%22&qt=morelikethis&rows=5
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Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features
Over a wide temperature range (77…400 K), we studied I-V curves of photoelectric converter (solar cell) prototypes made on the basis of p-AlxGa₁-xAs– p-GaAs–n-GaAs–n⁺-GaAs heteroepitaxial structures grown on smooth or microrelief n⁺-GaAs substrates using the standard liquid phase epitaxy (LPE) and t...
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Main Authors: | Dmitruk, N.L., Karimov, A.V., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V. |
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Format: | Article |
Language: | English |
Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/119964 |
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2025-02-23T17:54:41-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-119964%22&qt=morelikethis
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