Investigation of the undersurface damaged layers in silicon wafers

The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates were layer by layer etched in the polishing etching solution for investigation of...

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Бібліографічні деталі
Дата:1999
Автори: Holiney, R.Yu., Matveeva, L.A., Venger, E.F.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/120247
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Investigation of the undersurface damaged layers in silicon wafers / R.Yu. Holiney, L.A. Matveeva, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 10-12. — Бібліогр.: 11 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-120247
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spelling irk-123456789-1202472017-06-12T03:04:08Z Investigation of the undersurface damaged layers in silicon wafers Holiney, R.Yu. Matveeva, L.A. Venger, E.F. The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates were layer by layer etched in the polishing etching solution for investigation of the undersurface damaged layers. Surface and undersurface layers were qualified by the phenomenological parameter of broadening (PPB) from the electroreflectance spectra. The concealed undersurface damaged layers with thickness 25 µm were observed on the ST samples. The PPB decreased with exponential rule for the samples after cutting and achieved the permanent value on the depth 125 µm. 1999 Article Investigation of the undersurface damaged layers in silicon wafers / R.Yu. Holiney, L.A. Matveeva, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 10-12. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 71.25Rk, 81.60Cp. http://dspace.nbuv.gov.ua/handle/123456789/120247 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates were layer by layer etched in the polishing etching solution for investigation of the undersurface damaged layers. Surface and undersurface layers were qualified by the phenomenological parameter of broadening (PPB) from the electroreflectance spectra. The concealed undersurface damaged layers with thickness 25 µm were observed on the ST samples. The PPB decreased with exponential rule for the samples after cutting and achieved the permanent value on the depth 125 µm.
format Article
author Holiney, R.Yu.
Matveeva, L.A.
Venger, E.F.
spellingShingle Holiney, R.Yu.
Matveeva, L.A.
Venger, E.F.
Investigation of the undersurface damaged layers in silicon wafers
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Holiney, R.Yu.
Matveeva, L.A.
Venger, E.F.
author_sort Holiney, R.Yu.
title Investigation of the undersurface damaged layers in silicon wafers
title_short Investigation of the undersurface damaged layers in silicon wafers
title_full Investigation of the undersurface damaged layers in silicon wafers
title_fullStr Investigation of the undersurface damaged layers in silicon wafers
title_full_unstemmed Investigation of the undersurface damaged layers in silicon wafers
title_sort investigation of the undersurface damaged layers in silicon wafers
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 1999
url http://dspace.nbuv.gov.ua/handle/123456789/120247
citation_txt Investigation of the undersurface damaged layers in silicon wafers / R.Yu. Holiney, L.A. Matveeva, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 10-12. — Бібліогр.: 11 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT holineyryu investigationoftheundersurfacedamagedlayersinsiliconwafers
AT matveevala investigationoftheundersurfacedamagedlayersinsiliconwafers
AT vengeref investigationoftheundersurfacedamagedlayersinsiliconwafers
first_indexed 2023-10-18T20:36:34Z
last_indexed 2023-10-18T20:36:34Z
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